2.5-w ch pdf Datasheet P5 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : R5F21 TIS98 18EEP 8631CGD3 S2810H 01907 BC1602 QSE159
	Product Description
	Full Text Search

2.5-w ch Datasheet PDF File

For 2.5-w ch Found Datasheets File :: 24440 Search Time::1.796ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				FUJI[Fuji Electric]
Part No.	2SJ475-01
OCR Text	2SJ475-01 FAP-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance...5 -10 -0,2 10 0,08 0,045 15 2000 700 450 15 80 190 90 -2,0 160 0,9 Max. -2,5 -500 -1,0 100 0,11 0...
Description	FAP-III Series
File Size	296.96K / 2 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ479 2SJ479L 2SJ479S
OCR Text	2SJ479(L), 2SJ479(S) Silicon P channel DV-L MOS FET High Speed Power Switching ADE-208-541 1st. Edition Features * Low on-resistance R ...5 -2 -1 -0.5 0 s m = 1 10 m s s sh 50 25 Operation in this area is limited b...
Description	Power switching MOSFET Silicon P channel DV-L MOS FET High Speed Power Switching Silicon P channel DVL MOS FET High Speed Power Switching
File Size	37.54K / 7 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00
OCR Text	...VGS = -10 V, ID = -10 A) RDS(on)2 = 185 m (MAX.) (VGS = -4 V, ID = -10 A) * Low Ciss: Ciss = 1210 pF (TYP.) * Built-in gate protection diode...5 70 150 -55 to +150 -20 40 IAS EAS Notes 1. f = 20 kHz, Duty Cycle 10% (+Side) 2. PW 10 s, ...
Description	From old datasheet system SWITchING P-chANNEL POWER MOS FET INDUSTRIAL USE
File Size	70.31K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ493 D11265EJ3V0DS00
OCR Text	...(VGS = -10 V, ID = -8 A) RDS(on)2 = 185 m (MAX.) (VGS = -4 V, ID = -8 A) * Low Ciss: Ciss = 1210 pF (TYP.) * Built-in gate protection diode ...5 C/W C/W The information in this document is subject to change without notice. Document No. D...
Description	From old datasheet system SWITchING P-chANNEL POWER MOS FET INDUSTRIAL USE
File Size	64.87K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ494 D11266EJ2V0DS00
OCR Text	...S (in millimeter) 10.00.3 4.50.2 3.20.2 2.70.2 15.00.3 30.1 40.2 FEATURES * Super Low On-State Resistance RDS(on)1 = 50 m: Max. (...5 MIN. 12.00.2 ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage Gate to Source Vol...
Description	From old datasheet system SWITchING P-chANNEL POWER MOS FET INDUSTRIAL USE
File Size	68.73K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ495 2SJ295 D11267EJ2V0DS00
OCR Text	...S (in millimeter) 10.0 0.3 3.2 0.2 4.5 0.2 2.7 0.2 FEATURES * Super Low On-State Resistance 3 0.1 4 0.2 RDS(on)2 = 56 m MAX. (VGS = -4 V, ID = -15 A) * Low Ciss Ciss = 4120 pF TYP. * Built-in Gate Protection Diode ABSOLUT...
Description	From old datasheet system MOS Field Effect Power Transistors SWITchING P-chANNEL POWER MOS FET INDUSTRIAL USE
File Size	72.23K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ496
OCR Text	2SJ496 Silicon P-channel MOS FET High Speed Power Switching ADE-208-482 1st. Edition Features * Low on-resistance R DS(on) = 0.12 typ. (at VGS = -10 V, I D = -2.5 A) * 4V gate drive devices. * Large current capacitance ID = -5 A Out...
Description	Silicon P-channel MOS FET High Speed Power Switching
File Size	49.68K / 10 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ504
OCR Text	2SJ504 Silicon P channel MOS FET High Speed Power Switching ADE-208-546 Target specification 1st. Edition Features * Low on-resistance ...5 V -6 V -5 V -4 V -30 -3.5 V -20 -3 V -10 VGS = -2.5 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V ...
Description	Silicon P channel MOS FET High Speed Power Switching
File Size	50.21K / 10 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SJ505 2SJ505L 2SJ505S
OCR Text	2SJ505(L), 2SJ505(S) Silicon P channel MOS FET High Speed Power Switching ADE-208-547 Target specification 1st. Edition Features * Low ...5 V Pulse Test -5 V -8 V -80 -4 V -60 -3.5 V -40 -3 V -20 VGS = -2.5 V 0 -4 -8 -12 Drain to Source V...
Description	Silicon P channel MOS FET High Speed Power Switching Silicon P channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开 Power switching MOSFET
File Size	53.43K / 10 Page	View it Online	Download Datasheet

				Renesas Electronics, Corp. HITACHI[Hitachi Semiconductor]
Part No.	2SJ506 2SJ506L 2SJ506S
OCR Text	2SJ506(L), 2SJ506(S) Silicon P channel MOS FET High Speed Power Switching ADE-208-548 Target Specification 1st. Edition Features * Low ...5 -2 -1 -0.5 -0.2 -0.1 10 s channel Dissipation Drain Current 20 DC =1 Op 1...
Description	Silicon P channel MOS FET High Speed Power Switching Silicon P channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开 Power switching MOSFET
File Size	49.71K / 10 Page	View it Online	Download Datasheet

For 2.5-w ch Found Datasheets File :: 24440 Search Time::1.796ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |