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Infineon
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Part No. |
IHW20T120
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OCR Text |
... ordering code ihw20t120 1200v 20a 1.7v 150 c h20t120 to-247ac q67040-s4652 maximum ratings parameter symbol value unit collector-emi...600v, t j = 25 c - 120 - a switching characteristic, inductive load, at t j =25 c ... |
Description |
IGBT in Trench and Fieldstop Tech
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File Size |
347.61K /
14 Page |
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it Online |
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Mitsubishi Electric Corporation
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Part No. |
RM20C1A-XXF RM20DA/CA/C1A-XXF RM20CA-XXF RM20DA-XXF
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OCR Text |
.................................. 20a ? v rrm repetitive peak reverse voltage ...................... 600/800/1000/1200v ? t rr reverse recover...600v* 1 , t j =150 c junction to case case to fin, conductive grease applied min. typ. ... |
Description |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE Fast Recovery Diode Modules, F Series (for Bipolar speed switching)
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File Size |
53.32K /
3 Page |
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it Online |
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Micross Components
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Part No. |
ICE20N170
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OCR Text |
...s 50 v/ns v ds = 480v, i d = 20a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 180 w t c = 25...600v min r ds(on) v gs = 10v 0.17? typ q g v ds = 480v 62nc typ micross components ltd, united kin... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
753.80K /
4 Page |
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it Online |
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Micross Components
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Part No. |
ICE20N170U
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OCR Text |
...s 50 v/ns v ds = 480v, i d = 20a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 208 w t c = 25...600v min r ds(on) v gs = 10v 0.17? typ q g v ds = 480v 62nc typ micross components ltd, united kin... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
755.00K /
4 Page |
View
it Online |
Download Datasheet
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Price and Availability
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