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  20v-100v Datasheet PDF File

For 20v-100v Found Datasheets File :: 8687    Search Time::6ms    
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    MONOLITHIC POWER SYSTEMS INC
Part No. MP6001DN
OCR Text ... startup current i st v in = 20v, v cc = 4.0v 3 ma note: 5) guaranteed by design, not production tested. pin functions pin # ...100v/div. v out ac coupled 50mv/div. i l 1a/div. mp6001-tpc01 steady state test v in = 48v, v out ...
Description Monolithic Flyback/Forward DC-DC Converter Evaluation Board

File Size 501.13K  /  13 Page

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    2SJ456

SANYO[Sanyo Semicon Device]
Part No. 2SJ456
OCR Text ... ID=-5A ID=-5A, VGS=--10V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz --2.0 4.8 8.0 0.4 1950 505 230 0.55 Ratings min --250 30 --1...100V D PW=10s D.C.1% VOUT G 2SJ456 P.G 50 S --16 --14 --12 --10 --8 --6 --4 --2 0...
Description    Ultrahigh-Speed Switching Applications

File Size 29.04K  /  4 Page

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    Microchip
Part No. LR12K4-G LR12LG-G
OCR Text ...j pins to a nominal value of 1.20v. the 1.20v is ampliied by the external resistor ratio r 1 and r 2 . an internal constant bias current ...100v * * required for conditions where v in is less than v out . r 1 r 2 c 2 c 1 r load v out 1....
Description Linear Regulator ICs

File Size 339.86K  /  10 Page

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    2SJ583 2SJ583LS

SANYO[Sanyo Semicon Device]
Part No. 2SJ583 2SJ583LS
OCR Text ... td(off) tf Qg Qgs Qgd VSD VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=-100V, VGS=-10V, ID=-3.5A VDS=-100V, VGS=-10V, ID=...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 41.17K  /  4 Page

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    2SJ584LS

SANYO[Sanyo Semicon Device]
Part No. 2SJ584LS
OCR Text ... td(off) tf Qg Qgs Qgd VSD VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=-100V, VGS=-10V, ID=-4.5A VDS=-100V, VGS=-10V, ID=...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 41.64K  /  4 Page

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    2SJ585LS

Sanyo Semicon Device
Part No. 2SJ585LS
OCR Text ... td(off) tf Qg Qgs Qgd VSD VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=-100V, VGS=-10V, ID=-6.5A VDS=-100V, VGS=-10V, ID=...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 41.53K  /  4 Page

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    IRHNA63260 IRHNA64260 IRHNA67260 IRHNA68260

International Rectifier
Part No. IRHNA63260 IRHNA64260 IRHNA67260 IRHNA68260
OCR Text ... v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 240 v gs = 12v, i d = 63a q gs gate-to-source charge ? ? 70 nc v ds = 100v q gd gate-to-drain (?miller?) charge ? ? ...
Description 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package. Also available in 300, 600 and 1000kRad.

File Size 137.59K  /  8 Page

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    INTERSIL[Intersil Corporation]
Part No. FRE260R FRE260D FRE260H
OCR Text ... 1mA VDS = VGS, ID = 1mA VGS = +20V VGS = -20V VDS = 200V, VGS = 0 VDS = 160V, VGS = 0 VDS = 160V, VGS = 0,Tc = +125oC Time = 20s VGS = 10V, ID = 31A VGS = 10V, ID = 19A VDD = 100V, ID = 31A Pulse Width = 3s Period = 300s Rg = 10 0 < VGS <...
Description 31A/ 200V/ 0.080 Ohm/ Rad Hard/ N-Channel Power MOSFETs
31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs

File Size 48.34K  /  6 Page

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    IRHNJ53230

International Rectifier
Part No. IRHNJ53230
OCR Text ...leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 50 v gs =12v, i d = 13a q gs gate-to-source charge ? ? 7.4 nc v ds = 100v q gd gate-to-drain (?miller?) charge ? ? 2...
Description (IRHNJ5x230) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

File Size 272.38K  /  8 Page

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    FDB047N10

Fairchild Semiconductor
Part No. FDB047N10
OCR Text ...00V, VGS = 0V, TC = 150oC VGS = 20V, VDS = 0V 100 0.1 1 500 100 V V/oC A nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID =...
Description N-Channel PowerTrench垄莽 MOSFET 100V, 164A, 4.7m楼?
N-Channel PowerTrench? MOSFET 100V, 164A, 4.7mΩ

File Size 506.96K  /  8 Page

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