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210.380 Datasheet PDF File

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				SIPEX[Sipex Corporation]
Part No.	SP6122 SP6122ACU SP6122ACU_TR SP6122ACU-1.5 SP6122ACU-1.5_TR SP6122ACU-1.5/TR SP6122ACU/TR
OCR Text	... when PDRV goes Low. (internal) 210 150 300 270 390 380 kHz ns Soft Start Voltage when PDRV Switches - 250 - mV Rev. 7/16/03 SP6122 Low Voltage, Micro 8, PFET, Buck Controller (c) Copyright 2003 Sipex Corporation ...
Description	Low Voltage, Micro 8, PFET, Buck Controller Ideal for 1A to 5A, Small Footprint, DC-DC Power Converters
File Size	127.71K / 19 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	2N6505 2N6507 2N6509 2N6504 2N6508 2N6504/D
OCR Text	...0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 CATHODE ANODE GATE ANODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 ...
Description	5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路 Silicon Controlled Rectifiers
File Size	50.94K / 8 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5020BN APT5022BN
OCR Text	... 75 19 43 85 56 3500 830 350 210 27 110 38 86 125 112 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Ri...380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notic...
Description	POWER MOS IV 500V 28.0A 0.20 Ohm / 500V 27.0A 0.22 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	51.03K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5024AVR
OCR Text	...2 65 11 10 50 7 4320 660 270 210 35 95 22 20 75 14 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise ...380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and i...
Description	POWER MOS V 500V 18.5A 0.240 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.55K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd.
Part No.	APT5024BVFR
OCR Text	...2 65 11 10 50 7 4320 660 270 210 35 95 22 20 75 14 ns nC Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Tim...380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 5.00mH, R = 25, Pea...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 22A 0.240 Ohm
File Size	61.69K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5024BVR
OCR Text	...2 65 11 10 50 7 4320 660 270 210 35 95 22 20 75 14 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise ...380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and i...
Description	POWER MOS V 500V 22A 0.240 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.21K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5026HVR
OCR Text	...2 65 11 10 50 7 4320 660 270 210 35 95 22 20 75 14 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise ...380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and i...
Description	POWER MOS V 500V 18.5A 0.260 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.64K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT50M50 APT50M50PVR
OCR Text	... Gate Source Sense 5.33 (.210) 4.83 (.190) 11.63 (.458) 11.13 (.438) .635 (.025) .381 (.015) Dimensions in Millimeters and (Inches)
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 74.5A 0.050 Ohm
File Size	35.96K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M60L2VFR
OCR Text	...NIT pF 12000 1600 610 500 80 210 20 25 80 8 nC Gate-Source Charge Turn-on Delay Time Rise Time Gate-Drain ("Miller ") Charge Tu...380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and info...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.66K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M60L2VR
OCR Text	... ON TI ED AT NC RM VA FO AD IN 210 VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) (Body Diode) 2 ns MAX UNIT...380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and i...
Description	POWER MOS V 500V 77A 0.060 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	33.79K / 2 Page	View it Online	Download Datasheet

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