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Advanced Power Electron...
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| Part No. |
AP9620AGM-HF-16
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| OCR Text |
...eakdown voltage v gs =0v, i d =-250ua -20 - - v r ds(on) static drain-source on-resistance 2 v gs =-4.5v, i d =-9a - - 21 m v gs =-2.5v, i d =-6a - - 35 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.3 -0.6 -1 v g fs forwar... |
| Description |
Fast Switching Characteristic
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| File Size |
55.03K /
5 Page |
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it Online |
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Advanced Power Electron...
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| Part No. |
AP6679BMT
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| OCR Text |
...eakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-20a - - 9 m ? v gs =-4.5v, i d =-20a - - 15 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward t... |
| Description |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
106.77K /
6 Page |
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it Online |
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Advanced Power Electron...
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| Part No. |
10C150
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| OCR Text |
...reakdown voltage v gs =0v, i d =250ua 100 - - v v gs =10v, i d =2a - - 150 m v gs =5v, i d =1a - - 250 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =2a - 10 - s i dss drain... |
| Description |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
92.01K /
8 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STT04N20
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| OCR Text |
...hold voltage v ds =v gs , i d =250ua v ds =160v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter co... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
123.46K /
7 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STUD35L01
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| OCR Text |
...eshold voltage v ds =v gs ,i d =250ua v ds =80v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter condition... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
104.88K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
STUD35L01HA
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| OCR Text |
...eshold voltage v ds =v gs ,i d =250ua v ds =80v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter condition... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
108.96K /
8 Page |
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it Online |
Download Datasheet |
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