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WHITE ELECTRONIC DESIGNS CORP
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| Part No. |
TA7003I25
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| OCR Text |
... type-2 form factor with 128mb, 256mb, 128mb to 1gb industrial ata flash 512mb and 1.02gb unformatted capacity. being able to emulate ide hard disk drives, wedcs ata card is a perfect choice for solid-state mass-storage in industrial ap... |
| Description |
8M X 16 FLASH 3V PROM CARD, 250 ns, UUC68
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| File Size |
268.27K /
15 Page |
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INTEGRATED SILICON SOLUTION INC
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| Part No. |
IS42SM32800D-75BL IS42SM32800D-75BLI
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| OCR Text |
...42rm32800d 32mx8, 16mx16, 8mx32 256mb mobile synchronous dram october 2009 features fully synchronous; all signals referenced to a ? positive clock edge internal bank for hiding row access and pre - ? charge programmable cas latency: 2, ... |
| Description |
8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
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| File Size |
426.60K /
25 Page |
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it Online |
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samsung
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| Part No. |
K4S561632E
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| OCR Text |
256Mb E-die (x4, x8, x16)
CMOS SDRAM
256Mb E-die SDRAM Specification 54pin sTSOP-II
Revision 1.0 August. 2003
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.0 August, 2003
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| Description |
IC,SDRAM,4X4MX16,CMOS,TSSOP,54PIN,PLASTIC
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| File Size |
119.02K /
14 Page |
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it Online |
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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
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| Part No. |
M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554BG3-CD5_CC M470T6554BGZ0-CD5_CC M470T6554BGZ3-CD5_CC M470T6554BZ0-LD5_CC M470T6554BZ3-LD5_CC M470T2953BY0-LD5_CC M470T3354BG0-CD5_CC M470T3354BG3-CD5_CC M470T3354BGZ0-CD5_CC M470T3354BGZ3-CD5_CC M470T2953BSY3-CD5_CC M470T3354BZ0-LD5_CC M470T3354BZ3-LD5_CC M470T2953BY3-LD5_CC M470T2953BS3-CD5_CC M470T2953BSY0-CD5_CC M470T2953BXX M470T2953BY0 M470T2953BY0-LD5/CC M470T3354BZ0-LD5/CC M470T6554BZ0-LD5/CC M470T2953BS0-CD5/CC M470T3354BG0-CD5/CC M470T6554BG0-CD5/CC M470T3354BZ3-LD5/CC M470T2953BY3-LD5/CC M470T6554BZ3-LD5/CC M470T3354BG3-CD5/CC M470T6554BG3-CD5/CC M470T2953BSY0-CD5/CC M470T2953BSY3-CD5/CC M470T2953BS3-CD5/CC M470T3354BGZ0-CD5/CC M470T3354BGZ3-CD5/CC M470T6554BGZ3-CD5/CC M470T6554BGZ0-CD5/CC
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| OCR Text |
256MB, 512MB, 1GB Unbuffered SODIMMs
DDR2 SDRAM
DDR2 Unbuffered SODIMM
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE ... |
| Description |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
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| File Size |
325.20K /
19 Page |
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it Online |
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