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Advanced Power Electronics
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Part No. |
AP9565BGH
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OCR Text |
... v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-8a - 7.7 - s i dss drain-source leakage current (t j =25...32v, v gs =0v - - -25 ua i gss gate-source leakage v gs = 20v - - 100 na q g total gate charge 2 i ... |
Description |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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File Size |
133.43K /
6 Page |
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it Online |
Download Datasheet |
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Ruichips Semiconductor ...
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Part No. |
RU40E80L
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OCR Text |
...gs(th) gate threshold voltage 1.3 2.5 v i gss gate leakage current 10 a 4.5 7 m 5.5 11 m v sd diode forward voltage 1.2 v t rr reverse ...32v, v gs =10v, i ds =40a pulse width limited by safe operating area. calculated continuous curren... |
Description |
N-Channel Advanced Power MOSFET
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File Size |
315.62K /
8 Page |
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it Online |
Download Datasheet |
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Ruichips Semiconductor ...
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Part No. |
RU40120S
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OCR Text |
...noted) ? 40v/120a, r ds (on) =3.5m(typ.)@v gs =10v ? super high dense cell design ? ultra low on-resistance ? 100% avalanche tested ? lead...32v, v gs =10v, i ds =60a pulse width limited by safe operating area. calculated continuous curren... |
Description |
N-Channel Advanced Power MOSFET
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File Size |
308.70K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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