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GSI Technology, Inc.
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| Part No. |
GS840E18AB-190 GS840E18AT-190I
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| OCR Text |
...on applications the gs840e18/32/36a is a 4,718,592-bit (4,194,304-bit for x32 version) high performance synchronous sram with a 2- bit burst address counter. although of a type originally developed for level 2 cache applications supporti... |
| Description |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PBGA119
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PQFP100
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| File Size |
694.34K /
32 Page |
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GSI Technology, Inc.
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| Part No. |
GS88218AB-200I GS88218AB-250 GS88218AB-133 GS88218AD-150I GS88218AD-225I
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| OCR Text |
...iption applications the gs88218/36a is a 9,437,184-bit high performance synchronous sram with a 2-bit burst address counter. although of a type originally developed for level 2 cache applications supporting high performance cpus, the dev... |
| Description |
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 6.5 ns, PBGA119
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 5.5 ns, PBGA119
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 8.5 ns, PBGA119
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 7.5 ns, PBGA165
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 6 ns, PBGA165
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| File Size |
740.47K /
38 Page |
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it Online |
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GSI Technology, Inc.
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| Part No. |
GS840F18AGT-7.5I GS840F36AGT-7.5I
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| OCR Text |
...on applications the gs840f18/32/36a is a 4,718,592-bit (4,194,304-bit for x32 version) high performance synchronous sram with a 2- bit burst address counter. although of a type originally developed for level 2 cache applications supportin... |
| Description |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
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| File Size |
559.25K /
23 Page |
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it Online |
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GSI Technology, Inc.
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| Part No. |
GS8150V18AB-250 GS8150V36AB-250 GS8150V36AGB-250 GS8150V36AGB-250I GS8150V18AGB-300 GS8150V36AGB-333I GSITECHNOLOGY-GS8150V18AB-250T
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| OCR Text |
...able family overview gs8150v18/36a are 18,874,368-bit (18mb) high performance srams. this family of wide, very low voltage hstl i/o srams is designed to operate at the speeds needed to implement economical high performance cache syst... |
| Description |
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 2 ns, PBGA119
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 2 ns, PBGA119
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 1.6 ns, PBGA119
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 1.5 ns, PBGA119
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| File Size |
218.81K /
25 Page |
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it Online |
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GSI Technology, Inc.
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| Part No. |
GS815018AB-250 GS815018AGB-250 GS815036AB-250 GS815036AGB-250I GS815018AGB-357 GS815018AGB-333I GS815018AB-300I GS815036AB-300 GS815036AB-333I GS815036AGB-333I GS815036AB-333IT GS815018AB-357IT GS815036AB-357IT GS815018AB-250T
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| OCR Text |
...lable family overview gs815018/36a are 18,874,368-bit (18mb) high performance srams. this family of wide, low voltage hstl i/o srams is designed to operate at the speeds needed to implement economical high performance cache systems. ... |
| Description |
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 2 ns, PBGA119
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 2 ns, PBGA119
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 1.4 ns, PBGA119
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 1.5 ns, PBGA119
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 1M X 18 LATE-WRITE SRAM, 1.6 ns, PBGA119
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119
1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM 512K X 36 LATE-WRITE SRAM, 1.5 ns, PBGA119
512K X 36 LATE-WRITE SRAM, 1.4 ns, PBGA119
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| File Size |
221.21K /
25 Page |
View
it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
STRH100N10FSY2
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| OCR Text |
... resistance v gs = 12v i d = 36a 0.024 ? table 5. dynamic symbol parameter test condictions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v gs = 0v, v ds = 25v, f=1mhz 6600 71... |
| Description |
72 A, 100 V, N-CHANNEL, Si, POWER, MOSFET, TO-254AA HERMETIC SEALED PACKAGE-3
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| File Size |
199.77K /
9 Page |
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it Online |
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Electronic Theatre Controls, Inc.
GSI Technology, Inc.
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| Part No. |
GS840F18AGT-8I GS840F18AT-10 GS840F32AT-10 GS840F18AGT-12 GS840F18AT-12 GS840F32AGT-12I GS840F18AGT-8.5 GS840F32AGT-8 GS840F36AGT-8.5I GS840F32AT-8.5I GS840F18AT-10IT
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| OCR Text |
...on applications the gs840f18/32/36a is a 4,718,592-bit (4,194,304-bit for x32 version) high performance synchronous sram with a 2- bit burst address counter. although of a type originally developed for level 2 cache applications supportin... |
| Description |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 8 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 10 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 32 CACHE SRAM, 10 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 12 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 32 CACHE SRAM, 12 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 8.5 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 32 CACHE SRAM, 8 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8.5 ns, PQFP100
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 32 CACHE SRAM, 8.5 ns, PQFP100
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| File Size |
386.99K /
22 Page |
View
it Online |
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Infineon Technologies AG
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| Part No. |
SPP73N03S2L-10
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| OCR Text |
...e resistance v gs =4.5v, i d =36a r ds(on) - 10.3 13.1 m ? drain-source on-state resistance v gs =10v, i d =36a r ds(on) - 6.3 8 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connectio... |
| Description |
73 A, 30 V, 0.0131 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, TO-220, 3 PIN
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| File Size |
101.13K /
8 Page |
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it Online |
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