|
|
 |
INTERSIL[Intersil Corporation] Intersil, Corp.
|
Part No. |
FSYC260R4 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3
|
OCR Text |
... the data sheet.
Features
* 46a, 200V, rDS(ON) = 0.050 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up t... |
Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 46 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射,抗SEGR N沟道功率MOSFET
|
File Size |
48.34K /
8 Page |
View
it Online |
Download Datasheet
|
|
|
 |
FAIRCHILD[Fairchild Semiconductor]
|
Part No. |
FQG4904
|
OCR Text |
...
TM
Features
* N-Channel 0.46a, 400V, RDS(on) = 3.0 @ VGS = 10 V P-Channel -0.46a, -400V, RDS(on) = 3.0 @ VGS = -10 V * Low gate charge ( typical N-Channel 7.6 nC) ( typical P-Channel 20.0 nC) * Fast switching * Improved dv/dt capabi... |
Description |
400V Dual N & P-Channel MOSFET
|
File Size |
1,155.41K /
12 Page |
View
it Online |
Download Datasheet
|
|
|
 |
FAIRCHILD[Fairchild Semiconductor]
|
Part No. |
FDP46N30
|
OCR Text |
46a, 300V, RDS(on) = 0.079 @VGS = 10 V * Low gate charge (typical 58 nC) * Low Crss (typical 60 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effe... |
Description |
300V N-Channel MOSFET
|
File Size |
693.64K /
8 Page |
View
it Online |
Download Datasheet
|
|
|
 |
FAIRCHILD[Fairchild Semiconductor]
|
Part No. |
FDAF75N28
|
OCR Text |
46a, 280V, RDS(on) = 0.041 @VGS = 10 V * Low gate charge ( typical 111 nC) * Low Crss ( typical 90 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
UniFET
Description
TM
These N-Channel enhancement mode pow... |
Description |
280V N-Channel MOSFET
|
File Size |
723.01K /
8 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|