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  4m x 32 ddr dram 0 6 ns pbga14 Datasheet PDF File

For 4m x 32 ddr dram 0 6 ns pbga14 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    KMM5364003CKG KMM5364103CK KMM5364103CKG KMM5364003CK KMM5364103CKVG-5

SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KMM5364003CKG KMM5364103CK KMM5364103CKG KMM5364003CK KMM5364103CKVG-5
Description 0000'>4m 0000'>x 36 FAST PAGE 0000'>dram MODULE, 50 ns, SMA72
0000'>4m 0000'>x 36 0000'>dram SIMM using 0000'>4m0000'>x4 and 16M Quad CAS, 4K/2K Refresh, 5V 4米360000'>dram上海药物研究所利用0000'>4m0000'>x46M四中科院K/2K刷新V

File Size 278.03K  /  17 Page

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    Electronic Theatre Controls, Inc.
Part No. EM488M1644VTB-75F EM488M1644VTB-6F EM488M1644VTB-7F
Description 128Mb (2MBank16) Synchronous 0000'>dram
128Mb (2MBank6) Synchronous 0000'>dram 128Mb的(200万Bank6)同步0000'>dram
128Mb (2M??Bank??6) Synchronous 0000'>dram

File Size 254.21K  /  17 Page

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    Infineon
SIEMEns[Siemens Semiconductor Group]
SIEMEns AG
Part No. HYM72V1005GU-60 HYM72V1005GU-50 HYM64V1005GU-60 HYM64V1005GU-50 Q67100-Q2179 HM641005 Q67100-Q2176 Q67100-Q2177 Q67100-Q2178 HYM64V1005GU-5
Description 1M 0000'>x 72 Bit ECC 0000'>dram Module unbuffered
1M 0000'>x 64 Bit 0000'>dram Module unbuffered
From old datasheet system
3.3V 1M 0000'>x 64-Bit EDO-0000'>dram Module 3.3V 1M 0000'>x 72-Bit EDO-0000'>dram Module 1M 0000'>x 72 EDO 0000'>dram MODULE, 60 ns, DMA168
3.3V 1M 0000'>x 64-Bit EDO-0000'>dram Module 3.3V 1M 0000'>x 72-Bit EDO-0000'>dram Module 1M 0000'>x 64 EDO 0000'>dram MODULE, 60 ns, DMA168

File Size 73.94K  /  14 Page

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    http://
SIEMEns AG
Part No. HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB314175BJ-55 HYB314175BJL-60 HYB314175BJL-55 Q67100-Q2149 HYB314175BJ-50
Description High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的0000'>dram 3.3V56亩16位江户与0000'>dram的低功率版本自刷
3.3V 256 K 0000'>x 16-Bit EDO-0000'>dram 3.3V 256 K 0000'>x 16-Bit EDO-0000'>dram Low power version with Self Refresh
3.3V 256 K 0000'>x 16-Bit EDO-0000'>dram(3.3V 256K×16外延式数据输出(EDO)动态RAM)

File Size 1,310.29K  /  24 Page

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    HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 HYB3165805AT-60 HYB3165805AT-50 HYB3165805AT-40 HYB3165805AJ-60 HYB31

Infineon
SIEMEns[Siemens Semiconductor Group]
Part No. HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 HYB3165805AT-60 HYB3165805AT-50 HYB3165805AT-40 HYB3165805AJ-60 HYB3165805AJ-50 HYB3165805AJ-40 HYB3164805ATL-60 HYB3164805ATL-50 HYB3164805ATL-40 HYB3164805AT-60 HYB3164805AT-50 HYB3164805AT-40 HYB3164805AJ-60 HYB3164805AJ-50 HYB3164805AJ-40 HYB3164805AJ HB64805A
Description 0000'>4m 0000'>x 16 Bit 4k EDO 0000'>dram Low Power
8M 0000'>x 8 Bit 4k EDO 0000'>dram
8M 0000'>x 8 Bit 8k EDO 0000'>dram
8M 0000'>x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system

File Size 327.52K  /  29 Page

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    Hitachi,Ltd.
Part No. HM5118165LJ-5 HM5118165LJ-7 HM5118165TT-7 HM5118165TT-5 HM5118165TT-6
Description 16M EDO 0000'>dram (1-Mword 0000'>x 16-bit) 1 k Refresh
1M 0000'>x 16 EDO 0000'>dram, 50 ns, PDSO44
1M 0000'>x 16 EDO 0000'>dram, 60 ns, PDSO44

File Size 344.20K  /  33 Page

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    H57V1262GTR-50X H57V1262GTR-60X H57V1262GTR-70X H57V1262GTR-75X H57V1262GTR-75C H57V1262GTR-50J H57V1262GTR-50C H57V1262

HYNI0000'>x SEMICONDUCTOR INC
Part No. H57V1262GTR-500000'>x H57V1262GTR-600000'>x H57V1262GTR-700000'>x H57V1262GTR-750000'>x H57V1262GTR-75C H57V1262GTR-50J H57V1262GTR-50C H57V1262GTR-60J H57V1262GTR-70J
Description 128Mb Synchronous 0000'>dram based on 2M 0000'>x 4Bank 0000'>x16 I/O
8M 0000'>x 16 SYNCHRONOUS 0000'>dram, 5.4 ns, PDSO54
8M 0000'>x 16 SYNCHRONOUS 0000'>dram, 4.5 ns, PDSO54

File Size 201.69K  /  13 Page

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    AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC AS4C256K16E0-50JC AS4C256K16E0-50TC AS4C256K16E0-35 AS4C256K16E0-50 AS4

Alliance Semiconductor Corporation
ALSC
Part No. AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC AS4C256K16E0-50JC AS4C256K16E0-50TC AS4C256K16E0-35 AS4C256K16E0-50 AS4C256K16E0-30
Description 5V 256K 0000'>x 16 CM0S 0000'>dram (EDO), 50ns RAS access time
5V 256K 0000'>x 16 CM0S 0000'>dram (EDO), 35ns RAS access time
5V 256K0000'>x16 CMOS 0000'>dram (EDO)
5V 256K?6 CMOS 0000'>dram (EDO)
0000'>x16EDOPageMode0000'>dram
5V256K0000'>xCMOS0000'>dram(EDO)
5V 256K 0000'>x CMOS 0000'>dram (EDO)
5V 256K 0000'>x 16 CM0S 0000'>dram (EDO), 30ns RAS access time

File Size 516.95K  /  24 Page

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    K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S560832C-TC_L75 K4S560832C-TC_L7C K4S560832C-TC/L1H K4S560832C-TC/L1L K

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S56080000'>32C K4S56080000'>32C-TC_L1H K4S56080000'>32C-TC_L1L K4S56080000'>32C-TC_L75 K4S56080000'>32C-TC_L7C K4S56080000'>32C-TC/L1H K4S56080000'>32C-TC/L1L K4S56080000'>32C-TC/L75 K4S56080000'>32C-TC/L7C K4S56080000'>32C-TC750
Description 0000'>32M 0000'>x 8 SYNCHRONOUS 0000'>dram, 5.4 ns, PDSO54
256Mbit S0000'>dram 8M 0000'>x 8bit 0000'>x 4 Banks Synchronous 0000'>dram LVTTL

File Size 111.63K  /  11 Page

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    IBM Microeletronics
Part No. IBM03164B9C IBM0316809C
Description 16Mb Synchronous 0000'>dram(16M位同步动态RAM)
16MbMbit 0000'>x 8 I/O 0000'>x 2 Bank)Synchronous 0000'>dram(16M位(1M0000'>x 8 I/O 0000'>x 2 组)同步动态RAM)

File Size 1,551.23K  /  120 Page

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For 4m x 32 ddr dram 0 6 ns pbga14 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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