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  5.00 03 180 Datasheet PDF File

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    RJE0603JPE-00-J3 RJE0603JPE

Renesas Electronics Corporation
Part No. RJE0603JPE-00-J3 RJE0603JPE
OCR Text ... bound value. Ratings -60 -16 2.5 -50 Note3 -50 -15 964 100 150 -55 to +150 Unit V V V A A A mJ W C C REJ03G1907-0100 Rev.1.00 Apr 01, 2010 Page 1 of 6 RJE0603JPE Preliminary Typical Operation Characteristics (Ta = 25C) It...
Description Silicon P Channel MOS FET Series Power Switching

File Size 78.56K  /  7 Page

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    RJE0603JPE-00-J3 RJE0603JPE-15

Renesas Electronics Corporation
Part No. RJE0603JPE-00-J3 RJE0603JPE-15
OCR Text ...ate to source voltage v gss 2.5 v drain current i d ?50 note3 a body-drain diode reverse drain current i dr ?50 a avalanche cu...00 nov 04, 2010 rje0603jpe preliminary r07ds0193ej0200 rev.2.00 page 2 of 6 nov 04, 2010 ...
Description 50 A, 60 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET SC-83, LDPAK(S)-(1), 3 PIN
Silicon P Channel MOS FET Series Power Switching

File Size 78.82K  /  7 Page

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    RJK0210DPA-00-J5A RJK0210DPA10

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Renesas Electronics Corporation
Part No. RJK0210DPA-00-J5A RJK0210DPA10
OCR Text ...eed switching ? capable of 4.5 v gate drive ? low drive current ? high density mounting ? low on-resistance r ds(on) = 4.5 m ?...00 dec 07, 2010 rjk0210dpa preliminary r07ds0217ej0200 rev.2.00 page 2 of 6 dec 07, 2010 ...
Description Silicon N Channel Power MOS FET Power Switching

File Size 124.07K  /  7 Page

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    RJF0604JPD-00-J3 RJF0604JPD12

Renesas Electronics Corporation
Part No. RJF0604JPD-00-J3 RJF0604JPD12
OCR Text ...te to source voltage v gss ?2.5 v drain current i d note3 5 a body-drain diode reverse drain current i dr 5 a avalanche current...00 apr 13, 2012 rjf0604jpd target specifications r07ds0583ej0200 rev.2.00 page 2 of 7 apr ...
Description Silicon N Channel MOS FET Series Power Switching
   Silicon N Channel MOS FET Series Power Switching

File Size 83.92K  /  8 Page

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    RJK2006DPE-00-J3 RJK2006DPJ09

Renesas Electronics Corporation
Part No. RJK2006DPE-00-J3 RJK2006DPJ09
OCR Text ...1 20 1.0 150 0.8 Max -- 1 0.1 4.5 -- 0.059 -- -- -- -- -- -- -- -- -- -- 1.5 -- -- Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns C Test...00 Nov 19, 2009 Page 2 of 7 RJK2006DPJ, RJK2006DPE, RJK2006DPF Main Characteristics Maximum S...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 116.47K  /  8 Page

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    RJF0612DPE-00-J3

Renesas Electronics Corporation
Part No. RJF0612DPE-00-J3
OCR Text ...te to source voltage v gss ?2.5 v drain current i d note3 50 a body-drain diode reverse drain current i dr 50 a avalanche curre...00 nov 01, 2012 rjf0612dpe target specifications r07ds0903ej0100 rev.1.00 page 2 of 7 nov ...
Description 60V - 50A - N Channel Thermal FET Power Switching

File Size 91.04K  /  8 Page

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    RJK03H1DPA-00-J5A

Renesas Electronics Corporation
Part No. RJK03H1DPA-00-J5A
OCR Text ...gh speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.0 m typ. (at VGS = 8.0 ...00 Dec 07, 2010 Page 1 of 6 RJK03H1DPA Preliminary Electrical Characteristics (Ta = 25...
Description Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

File Size 93.18K  /  7 Page

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    RJK0212DPA-00-J5A RJK0212DPA10

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Renesas Electronics Corporation
Part No. RJK0212DPA-00-J5A RJK0212DPA10
OCR Text ...eed switching ? capable of 4.5 v gate drive ? low drive current ? high density mounting ? low on-resistance r ds(on) = 9 m ? ...00 dec 07, 2010 rjk0212dpa preliminary r07ds0219ej0200 rev.2.00 page 2 of 6 dec 07, 2010 ...
Description Silicon N Channel Power MOS FET Power Switching

File Size 123.18K  /  7 Page

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