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5.7ghz Datasheet PDF File

For 5.7ghz Found Datasheets File :: 681 Search Time::1.39ms
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				SANYO[Sanyo Semicon Device]
Part No.	2SC5415
OCR Text	...ns unit:mm 2038A [2SC5415] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Bas...
Description	NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications
File Size	45.72K / 6 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TIM7785-16UL
OCR Text	...N UNIT MIN. TYP. MAX. dBm 41.5 7.5 -44 42.5 8.5 4.4 35 -47 4.4 5.0 0.6 5.0 80 f = 7.7 - 8.5GHz add IM3 dBc A C VDS X IDS X Rth(c-c) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Pinc...
Description	MICROWAVE POWER GaAs FET
File Size	69.02K / 4 Page	View it Online	Download Datasheet

				Fujitsu Component Limited. Fujitsu Media Devices Limited
Part No.	FMM5017VF
OCR Text	... output stage in the 14.0 to 14.5 GHz band. This device is well suited for designs that require less than 1 Watt and lower cost. Fujitsu's s...7GHz 0.04 0.02 0 10 25 14.7GHz 100 13.8GHz 180 15 10 14.7GHz 5 14.7GHz...
Description	GaAs MMIC From old datasheet system
File Size	86.68K / 4 Page	View it Online	Download Datasheet

				Fujitsu Microelectronics Fujitsu Media Devices Limited Fujitsu Component Limited.
Part No.	FMM5046VF
OCR Text	...oltage (VGG) should not exceed -5 volts. ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25C) Item Frequency Range Output Power at 1dB G...7GHz 2.7GHz 2.2 10 25 2.6 2.3 2.5 2.4 +j250 2.6 2.4 2.7GHz 2.4 2.7GHz 2.0 2.3 1.7 8 16 1...
Description	From old datasheet system GaAs MMIC
File Size	111.32K / 4 Page	View it Online	Download Datasheet

				FUJI ELECTRIC HOLDINGS CO., LTD.
Part No.	FMM5057VF
OCR Text	...0 -40 to +85 Limit Typ. 7.1 - 8.5 VDD=10V VGG=-5V f=7.1 to 8.5GHz 32.0 23.0 VDD=10V,VGG=-5V 34.0 26.0 2.4 2:1 2:1 1100 5.0 50 4.0 2.6 : 1 12...7GHz 8.5GHz 50 Output P ow e r [dBm ] 32 40 P ow e r Adde d Efficie ncy[%] 28 30 ...
Description	14 POS DUAL ROW SOCKET 7.1-8.5GHz Power Amplifier MMIC From old datasheet system
File Size	296.99K / 8 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	FMM5061VF
OCR Text	5~13.3GHz Impedance Matched Zin/Zout=50 Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains...7GHz 2:f=11.7~13.3GHz Min. 9.5 1 31 292 24 2 22 1 - 15 3:f=10MHz , -423 -453 1 1 2-T...
Description	X-Band Power Amplifier MMIC
File Size	170.74K / 14 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
Part No.	MGF7176C 7176C
OCR Text	...rol voltage Input power Ratings 5 5 4.5 5 Unit V V V dBm deg.C deg.C Operating case temperature -30 ~ +85 Storage temperature -30 ~ +100 *1.Each maximum rating is guaranteed independently. ELECTRICAL CHARACTERISTICS (Ta=25 deg.C) ...
Description	3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER From old datasheet system
File Size	19.71K / 2 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. SIRENZA[SIRENZA MICRODEVICES] Stanford Microdevices List of Unclassifed Manufacturers
Part No.	SLX-2143 ELECTRONICTHEATRECONTROLSINC.-SLX-2143
OCR Text	...1.25 1.00 0.75 0.50 0.25 0.00 1.5 Product Features * * * * * 1.7 1.9 2.1 2.3 2.5 Very Low Noise Figure, 1.05dB High OIP3 = +35dBm ...7GHz to 2.2GHz Application Schematic VD C4 C3 L1 C1 RF IN Package Backside Connect to RF/D C groun...
Description	1700-2200 MHz High Linearity Low Noise Amplifier Module
File Size	158.74K / 7 Page	View it Online	Download Datasheet

				Mitel Semiconductor MITEL[Mitel Networks Corporation]
Part No.	SP8855 SP8855E
OCR Text	... a screened option Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Description Input bus bit 10 Input bus bit 9 Input bus bit ...7GHz See Fig. 3 Reference division ratio 2 at frequencies >50MHz also see Note 1. Sine Wave 10-1...
Description	2.8GHz Parallel Load Professional Synthesiser MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):10mohm; Rds(on) Test
File Size	168.71K / 14 Page	View it Online	Download Datasheet

				Toshiba Corporation Toshiba Semiconductor
Part No.	TIM1011-2L
OCR Text	...se IDS2 Tch IDS1 G1dB VDS= 9V 6.5 Two Tone Test P=22dBm (Single Carrier Level) SYMBOL P1dB CONDITION MIN. TYP. MAX. UNIT 32.5 33...7GHz add IM3 -42 VDS X IDS X Rth(c-c) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERI...
Description	MICROWAVE POWER GaAs FET From old datasheet system
File Size	142.06K / 5 Page	View it Online	Download Datasheet

For 5.7ghz Found Datasheets File :: 681 Search Time::1.39ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |