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				Renesas Electronics, Corp. HITACHI[Hitachi Semiconductor]
Part No.	2SJ506 2SJ506L 2SJ506S
OCR Text	...8 V -20 -4.5 V Pulse Test -5 V -6 V -16 -4 V -12 Typical Transfer Characteristics -20 V DS = -10 V Pulse Test 25 C -16 -12 Drain Current Drain Current -3.5 V -8 -3 V -4 VGS = -2.5 V 0 -4 -8 -12 Drain to Source Voltage -16 ...
Description	Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开 Power switching MOSFET
File Size	49.71K / 10 Page	View it Online	Download Datasheet

				Sanyo Semicon Device Sanyo Electric Co., Ltd.
Part No.	2SJ520 2SJ520TP-FA
OCR Text	...sions unit:mm 2083B [2SJ520] 6.5 5.0 4 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 1 2 3 7.5 0.5 2.3...0m s tio n Operation in this area is limited by RDS(on). Total Gate Charge, Qg - nC ...
Description	P-Channel Silicon MOSFET Load Switching Applications Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管\| MOSFET的\| P通道\| 20V的五（巴西）直\| 10A条（丁）\|52VAR
File Size	43.24K / 4 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
Part No.	2SJ522
OCR Text	...10.2 4.5 1.3 11.5 1.6 20.9 1.2 11.0 9.4 0.8 8.8 0.4 1 2 3 2.7 1 : Gate 2 : Drain 3 : Source SANY...0m s op era tio n 10 s 1.0 0.5 --0.01 --1.0 Tc=25C Single pulse 2 3 5 7 --10 2 3 ...
Description	P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	30.28K / 4 Page	View it Online	Download Datasheet

				Toshiba Semiconductor Hitachi Semiconductor
Part No.	2SJ539
OCR Text	...1MHz VGS = -10V, I D = -5A RL = 6 Body-drain diode forward voltage VDF Body-drain diode reverse recovery time Note: 4. Pulse test t rr ...0m pe s ra (1 tio s n ho (T t) c= 25 Operation in 0 s 1 m s 20 this area is lim...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	52.99K / 9 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ557 2SJ557-T2B 2SJ557-T1B
OCR Text	...TA = 125C 75C 25C -1.8 -1.6 -25C -1.4 -0.0001 -0.00001 0 -1 -2 -3 -4 -5 -1.2 -50 0 50 100 150 VGS - Gate to Sorce Voltage - V FORWARD TRANSFER ADMMITTANCE Vs. DRAIN CURRENT 100 \| yfs \| - For...
Description	Pch enhancement type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size	60.99K / 8 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device] Sanyo Electric Co., Ltd.
Part No.	2SJ561
OCR Text	... unit:mm 2062A [2SJ561] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Rati...0m DC s op I D =- 1 . 5 A er at io n Operation in this area is limited by RDS(on). 1.0 3 5 ...
Description	Ultrahigh-Speed Switching Applications Zener Diode,Single, Two Terminal,33V V(Z),5%,DO-5 RoHS Compliant: Yes 超高速开关应
File Size	158.24K / 4 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SJ562
OCR Text	... unit:mm 2062A [2SJ562] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Rati...0m s er ati on tf Operation in this area is limited by RDS(on). -0.01 -0.1 Tc=25C Singl...
Description	P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	146.08K / 4 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SJ578
OCR Text	... unit:mm 2062A [2SJ578] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Rati...0m s era tio n Gate-to-Source Voltage, VGS - V --8 --7 --6 --5 --4 --3 --2 --1 0 0 0.5 1.0 1....
Description	Ultrahigh-Speed Switching Applications
File Size	41.15K / 4 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SJ579
OCR Text	... unit:mm 2062A [2SJ579] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Rati...0m n s Operation in this area is limited by RDS(on). tio Tc=25C 2 3 5 7 --10 2 3 0....
Description	Ultrahigh-Speed Switching Applications
File Size	41.45K / 4 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SJ580
OCR Text	...nit : mm 2062A [2SJ580] 4.5 1.6 1.5 Low ON-resistanse. Ultrahigh-speed switching. 4V drive. 0.5 3 1.5 2 3.0 1 1.0 ...0m s n era tio Operation in this area is limited by RDS(on). Tc=25C Single pulse 2 3 5...
Description	Ultrahigh-Speed Switching Applications
File Size	29.05K / 4 Page	View it Online	Download Datasheet

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