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For 80 sec Found Datasheets File :: 60601 Search Time::2.11ms
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				IRF[International Rectifier]
Part No.	IRF1310NL IRF1310NS
OCR Text	...40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( oC) Fig 3. Typi...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRF1310NS/L 1000...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
File Size	152.94K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1310N
OCR Text	...40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( oC) Fig 3. Typi...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRF1310N 1000 ...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A) Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
File Size	92.91K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1310S
OCR Text	... 0 -20 0 20 40 60 VGS = 10V 80 100 120 140 160 180 V G S , G a te-to-S o urce V olta ge (V ) TJ , Junction Temperature (C) Fig ...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case To Order Previ...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)
File Size	319.11K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1404L IRF1404S
OCR Text	...s while VDS is rising from 0 to 80% VDSS Calculated continuous current based on maximum allowable junction temperature. Package limitat...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 ...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)
File Size	237.30K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1404
OCR Text	...s while VDS is rising from 0 to 80% VDSS Calculated continuous current based on maximum allowable junction temperature. Package limitation ...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 ...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A)
File Size	105.33K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1405L IRF1405S
OCR Text	...40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typic...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 ...
Description	Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A? Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=131A) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?) 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	153.38K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1405
OCR Text	...s while VDS is rising from 0 to 80% VDSS . Calculated continuous current based on maximum allowable junction temperature. Package limitation...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 ...
Description	Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A? Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?) Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A) Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)
File Size	114.28K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF1407L IRF1407S IRF1407STRR
OCR Text	...s while VDS is rising from 0 to 80% VDSS . R Starting TJ = 25C, L = 0.13mH RG = 25, IAS = 78A. (See Figure 12). S ISD 78A, di/dt 320A/...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 ...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?) Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A) Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A) TRANSISTOR \| MOSFET \| N-CHANNEL \| 75V V(BR)DSS \| 100A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 75V的五（巴西）直\| 100号A（丁）\|63AB
File Size	158.12K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1407
OCR Text	...s while VDS is rising from 0 to 80% VDSS . VCalculated continuous current based on maximum allowable junction temperature. Package limitatio...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 ...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A? Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?) POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ) Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A) Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)
File Size	126.10K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1607
OCR Text	...s while VDS is rising from 0 to 80% VDSS . Starting TJ = 25C, L = 0.21mH Calculated continuous current based on maximum allowable RG = 25,...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 ...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)
File Size	179.50K / 9 Page	View it Online	Download Datasheet

For 80 sec Found Datasheets File :: 60601 Search Time::2.11ms
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