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				TT electronics Semelab Limited SEME-LAB[Seme LAB]
Part No.	IRF9130SMD
OCR Text	....3 9 (0 .4 0 9 ) 2 -100V -8A W 0.35W 0 .7 6 (0 .0 3 0 ) m in . 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1) 9) 6) 4) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 ...
Description	P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
File Size	20.44K / 2 Page	View it Online	Download Datasheet

				Phihong USA Inc.
Part No.	PSA60-112 PSA60-124 PSA60-10514 PSA60-115
OCR Text	... 2,3 +24v (v2) 0.1a 1.3a 1.8a 240mv 5% 1 psa60-203 +5v (v1) 1.0a 4.0a 6.0a 50mv 2% 2,3 +12v (v2) 0.3a 3.5a 4.5a 120mv 5% 1 psa60-301 +5v (v1) 1.0a 6.0a 8.0a 50mv 2% 2,3 +12v (v2) 0.3a 2.2a 3.0a 120mv 5% ...
Description	PSA60 Series Switching power Supply
File Size	97.26K / 2 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPB65R225C7
OCR Text	...gle pulse e as - - 48 mj i d =4.8a; v dd =50v avalanche energy, repetitive e ar - - 0.24 mj i d =4.8a; v dd =50v avalanche current, single pulse i as - - 4.8 a - mosfet dv/dt ruggedness dv/dt - - 100 v/ns v ds =0...400v gate source voltage ...
Description	650V CoolMOS C7 Power Transistor
File Size	1,776.37K / 15 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF9530-220M
OCR Text	...unction to Ambient 20V -9.3A -5.8A -37A 45W 0.36W/C -55 to 150C 2.8C/W max. 80C/W max. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 7/00 I...
Description	P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
File Size	18.21K / 2 Page	View it Online	Download Datasheet

				TT electronics Semelab Limited SEME-LAB[Seme LAB]
Part No.	IRF9530S IRF9530SMD
OCR Text	... 1 0 .3 9 (0 .4 0 9 ) -100V -8A W 0.35W 0 .7 6 (0 .0 3 0 ) m in . 9 .6 7 (0 .3 8 1 ) 9 .3 8 (0 .3 6 9 ) 1 1 .5 8 (0 .4 5 6 ) 1 1 .2 8 (0 .4 4 4 ) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 )...
Description	P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
File Size	22.38K / 2 Page	View it Online	Download Datasheet

				STMICROELECTRONICS
Part No.	STTA812G-TR
OCR Text	...ier diodes. description i f(av) 8a v rrm 1200v t rr (typ) 50ns v f (max) 2.0v main product characteristics symbol parameter value unit v rrm repetitive peak reverse voltage 1200 v v rsm non repetitive peak reverse voltage 1200 v i f(rms) rm...
Description	8 A, 1200 V, SILICON, RECTIFIER DIODE
File Size	228.46K / 10 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH
Part No.	SSG4401P
OCR Text	... - 160 v gs = -10v, i d = -2.8a drain-source on-resistance 1 r ds(on) - - 170 m v gs = -5.5v, i d = -2.3a forward transconductance 1 g fs - 38 - s v ds = -15v, i d = -2.8a diode forward voltage v sd - -0.76 -...
Description	P-Ch Enhancement Mode Power MOSFET
File Size	460.40K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IR3841MPBF
OCR Text	...ge 0.7v to 0.9*vin ? continuous 8a load capability ? integrated bootstrap-diode ? high bandwidth e/a for excellent transient performance ? programmable switching frequency up to 1.5mhz ? programmable over current protection (hiccup) ? pgoo...
Description	Highly Efficient Integrated 8A Sync Buck Regulator
File Size	978.35K / 32 Page	View it Online	Download Datasheet

				Panasonic
Part No.	2SK1803
OCR Text	... v ds = 25v, i d = 4a i dr = 8a, v gs = 0 v ds = 20v, v gs = 0, f = 1mhz v gs = 10v, i d = 4a v dd = 200v, r l = 50 w min 900 1 3 typ 1.3 5.5 1800 200 90 100 80 250 max 0.1 1 5 1.7 - 1.6 1.25 unit ma m a v v w s v pf pf pf ns ns n...
Description	Silicon N-Channel Power F-MOS FET
File Size	172.50K / 4 Page	View it Online	Download Datasheet

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