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				MOSEL[Mosel Vitelic, Corp]
Part No.	V53C318165A V53C318165A50 V53C318165A60 V53C318165A70
OCR Text	...cess time: 50, 60, 70 ns s Dual cas Inputs s Low power dissipation s Read-Modify-Write, RAS-Only Refresh, cas-Before-RAS Refresh, Hidden Refresh, and Self Refresh. s Refresh Interval: 1024 cycles/16 ms s Available in 42-pin 400 mil SOJ and ...
Description	3.3 VOLT 1M X 16 EDO PAGE MODE CMOS DYNAMIC RAM
File Size	266.08K / 18 Page	View it Online	Download Datasheet

				SANKEN[Sanken electric]
Part No.	2SA1488A 2SA1488
OCR Text	... -1 -1 C ( -10mA (cas -0.5 eT emp ) e Te mp) (cas e Tem p) -2 -20mA -2 cas -1.0 -1.5 Collector-Emitter Voltage V C E( V) Base Current I B( A) Base-Emittor Voltage V B E( V) (V C E= -4V) 500 ...
Description	Silicon PNP Transistor Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)
File Size	23.32K / 1 Page	View it Online	Download Datasheet


Part No.	MT47H64M4BG-37E
OCR Text	...urrent operation programmable cas latency (cl): 3 and 4 posted cas additive latency (al): 0, 1, 2, 3, and 4 write latency = read latency - 1 t ck programmable burst lengths: 4 or 8 adjustable data-output drive strength 64ms, 8,...
Description	64M X 4 DDR DRAM, 0.5 ns, PBGA84
File Size	7,755.37K / 104 Page	View it Online	Download Datasheet

				Elpida Memory, Inc.
Part No.	EBE21RD4ABHA
OCR Text	...s) ? burst length: 4, 8 ? /cas latency (cl): 3, 4, 5 ? auto precharge option for each burst access ? auto refresh and self refresh modes ? 7.8 s average periodic refresh interval ? posted cas by programmable additive latency...
Description	GT 13C 13#16 PIN PLUG
File Size	170.15K / 22 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation
Part No.	MH32S72APHB-7
OCR Text	...trolled by ba0,1(bank address) /cas latency- 2/3(programmable) application pc main memory auto precharge / all bank precharge controlled by a10 burst type- sequential / interleave(programmable) column access - random lvttl interface auto re...
Description	2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
File Size	749.66K / 55 Page	View it Online	Download Datasheet

				ETRON[Etron Technology, Inc.] ETRON[Etron Technology Inc.]
Part No.	EM658160 EM658160TS-33 EM658160TS-35 EM658160TS-4 EM658160TS-5 EM658160TS-6 EM658160TS-7 EM658160TS-8
OCR Text	... and Extended Mode registers - /cas Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved * Individual byte write mask control * DM Write Latency = 0 * Auto Refresh and Self Refresh * 4096 refresh cycles / 64ms *...
Description	4M x 16 DDR Synchronous DRAM (SDRAM)
File Size	154.94K / 26 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text	...family. All of this family have cas-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx4 EDO DRAM family is fabricated using Samsungs advanced CMOS pr...
Description	4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
File Size	254.50K / 21 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text	... * Fast Page Mode operation * cas-before-RAS refresh capability * RAS-only and Hidden refresh capability * Self-refresh capability (L-ver only) * Fast parallel test mode capability * TTL(5V)/LVTTL(3.3V) compatible inputs and outputs * Ear...
Description	4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
File Size	223.25K / 20 Page	View it Online	Download Datasheet

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