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For charge Found Datasheets File :: 83201    Search Time::1.453ms    
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    ICL232CBE ICL232CPE ICL232LBE ICL232LPE ICL232 ICL232MJE

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. ICL232CBE ICL232CPE ICL232LBE ICL232LPE ICL232 ICL232MJE
OCR Text ...upply, and features two onboard charge pump voltage converters which generate +10V and -10V supplies from the 5V supply. The drivers feature true TTL/CMOS input compatibility, slewrate-limited output, and 300 power-off source impedance. The...
Description 5V Powered, Dual RS-232 Transmitter/Receiver 5V的技术,双路RS - 232发送器/接收
5V Powered/ Dual RS-232 Transmitter/Receiver

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    2SK3641

Guangdong Kexin Industrial Co.,Ltd
Part No. 2SK3641
OCR Text ...s fall time tf 11 ns total gate charge q g 22 nc gate to source charge q gs 3.6 nc gate to drain charge q gd 7.4 nc body diode forward voltage note v f(s-d) i f =36a,v gs =0v 1.0 v reverse recovery time t rr i f =36a,v gs =0v 24 ns reverse ...
Description MOS Field Effect Transistor

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    TY Semiconductor Co., Ltd
Part No. 2SK3640
OCR Text ...ns fall time t f 7ns total gate charge q g v dd =24v 14 nc gate-source charge q gs v gs =10v 2.4 nc gate-drain charge q gd i d =19a 4.3 nc diode forward voltage v f(s-d) i f =19a,v gs =0v 0.95 v reverse recovery time t rr i f =19a,v gs =0v ...
Description Low on-state resistance RDS(on)1 = 21 m MAX. Built-in gate protection diode

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    TOSHIBA
Part No. TPHR9003NL
OCR Text ...-speed switching (2) small gate charge: q sw = 16 nc (typ.) (3) low drain-source on-resistance: r ds(on) = 1.1 m ? (typ.) (v gs = 4.5 v) (4) low leakage current: i dss = 10 a (max) (v ds = 30 v) (5) enhancement mode: v th = 1.3 to ...
Description Power MOSFET (N-ch single VDSS≤30V)

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    TOSHIBA
Part No. TPCA8059-H
OCR Text ...-speed switching (3) small gate charge: q sw = 9.1 nc (typ.) (4) low drain-source on-resistance: r ds(on) = 3.8 m ? (typ.) (v gs = 4.5 v) (5) low leakage current: i dss = 10 a (max) (v ds = 30 v) (6) enhancement mode: v th = 1.3 to...
Description Power MOSFET (N-ch single VDSS≤30V)

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    TK72E08N1

Toshiba Semiconductor
Part No. TK72E08N1
OCR Text ...it 6.3. 6.3. 6.3. 6.3. gate charge characteristics (t gate charge characteristics (t gate charge characteristics (t gate charge characteristics (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specif...
Description Switching Voltage Regulators

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    TOSHIBA
Part No. SSM6J215FE
OCR Text ... 4 5.4. 5.4. 5.4. 5.4. gate charge characteristics (unless otherwise specified, t gate charge characteristics (unless otherwise specified, t gate charge characteristics (unless otherwise specified, t gate charge characteristics (unless ...
Description Small-signal MOSFET

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    Icemos Technology
Part No. ICE4N70FP
OCR Text ...ow r ds(on) ? ultra low gate charge ? high d v /d t capability ? high unclamped inductive switching (uis) capability ? high peak current capability ? increased transconductance performance ? optimized design for high performa...
Description N-Channel Enhancement Mode MOSFET

File Size 518.42K  /  9 Page

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    ICL3310 ICL3310CB ICL3310CB-T ICL3310IB ICL3310IB-T

INTERSIL[Intersil Corporation]
Part No. ICL3310 ICL3310CB ICL3310CB-T ICL3310IB ICL3310IB-T
OCR Text ... is critical. Efficient on-chip charge pumps, coupled with a manual powerdown function reduces the standby supply current to a 1A trickle. Small footprint packaging, and the use of small, low value capacitors ensure board space savings as w...
Description 3V to 5.5V, 1 Microamp, 250kbps, RS-232 Transmitter/Receiver

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    FCH072N60F-ND

Fairchild Semiconductor
Part No. FCH072N60F-ND
OCR Text ...s(on) = 65 m ? ultra low gate charge (typ. q g = 165 nc) ? low effective output capacitance (typ. c oss(eff.) = 441 pf) ? 100% avalanche tested ? rohs compliant description superfet ? ii mosfet is fairchil d semiconductor?s brand-new ...
Description FCH072N60F N-Channel SuperFET II FRFET MOSFET 600 V, 52 A, 72 mΩ
N-Channel SuperFET? II FRFET? MOSFET

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