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Part No. |
MR16R082CBN1-CG6 MR16R082CBN1-CK7
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OCR Text |
...buses with independent row and column control yield over 95% bus efficiency. the rdram's 32-bank architecture supports up to four simultaneous transactions per device. features h igh speed 800, 711 and 600mhz rdram storage 184 edg... |
Description |
96M X 16 RAMBUS MODULE, 53.3 ns, DMA184 96M X 16 RAMBUS MODULE, 45 ns, DMA184
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File Size |
268.08K /
14 Page |
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Part No. |
HYM71V16735AT8-K
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OCR Text |
..., /cas, /we row address strobe, column address strobe, write enable /ras, /cas and /we define the operation refer function truth table for details dqm0~dqm7 data input/output mask controls output buffers in read mode and masks input data i... |
Description |
x72 SDRAM Module
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File Size |
211.45K /
14 Page |
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it Online |
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HYNIX SEMICONDUCTOR INC
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Part No. |
HY5PS12821F-Y6
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OCR Text |
...vddq nc vdd odt vdd vss row and column address table items 128mx4 organization 32m x 4 x 4banks row address a0 - a13 column address a0-a9, a11 bank address ba0, ba1 auto precharge flag a10 refresh 8k
rev. 0.6 / apr.2003 ... |
Description |
64M X 8 DDR DRAM, PBGA60
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File Size |
885.74K /
67 Page |
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it Online |
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PROMOS TECHNOLOGIES INC
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Part No. |
V58C2256164SCE5B
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OCR Text |
...lect ras row address strobe cas column address strobe we write enable dqs (udqs, ldqs) data strobe (bidirectional) a 0 ?a 12 address inputs ba0, ba1 bank select dq?s data input/output dm (udm, ldm) data mask v dd power (+2.5v and +2.6v for ... |
Description |
16M X 16 DDR DRAM, 0.65 ns, PDSO66
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File Size |
917.36K /
61 Page |
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it Online |
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INTEGRATED SILICON SOLUTION INC
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Part No. |
IS42SM32400E-75EBLI
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OCR Text |
...addressing a0-a11 a0-a11 a0-a11 column addressing a0-a9 a0-a8 a0-a7 bank addressing ba0, ba1 ba0, ba1 ba0, ba1 precharge addressing a10 a10 a10 addressing table description issi's 128mb mobile synchronous dram achieves high- speed data tran... |
Description |
4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
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File Size |
764.69K /
26 Page |
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it Online |
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Price and Availability
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