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For complicate Found Datasheets File :: 777 Search Time::0.968ms
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				ONSEMI[ON Semiconductor]
Part No.	NTP60N06 NTP60N06G NTB60N06 NTB60N06G NTB60N06T4 NTB60N06T4G
OCR Text	...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which...
Description	Power MOSFET 60 Amps, 60 Volts 60 V, 60 A, N-Channel TO-220 and D2PAK 60 V, 60 A, N−Channel TO−220 and D2PAK 60 V / 60 A / N&Channel TO&220 and D2PAK
File Size	85.70K / 10 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTP85N03 NTB85N03 NTB85N03T4
OCR Text	...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which...
Description	Power MOSFET 85 Amps / 28 Volts Power MOSFET 85 Amps, 28 Volts N-Channel TO-220(85A,28V,N通道,TO-220封装的功率MOSFET)
File Size	80.80K / 12 Page	View it Online	Download Datasheet

				ON Semi Motorola, Inc.
Part No.	MTB1306 MTB1306_D ON2393 ON2392
OCR Text	...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which...
Description	TMOS POWER FET 75 AMPERES 30 VOLTS From old datasheet system
File Size	172.51K / 8 Page	View it Online	Download Datasheet

				MOTOROLA INC MOTOROLA[Motorola, Inc]
Part No.	MTB20N20E ON2400
OCR Text	...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which...
Description	TMOS POWER FET 20 AMPERES 200 VOLTS From old datasheet system
File Size	258.36K / 10 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G
OCR Text	...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which...
Description	TMOS Power FET TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount
File Size	93.40K / 8 Page	View it Online	Download Datasheet

				ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTD1302 MTD1302_D ON2464 ON2463
OCR Text	...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which...
Description	TMOS POWER FET 20 AMPERES 30 VOLTS From old datasheet system
File Size	201.67K / 12 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MTD3055V1 MTD3055VT4 MTD3055V MTD3055V-D
OCR Text	...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which...
Description	Power MOSFET 12 Amps, 60 Volts N-Channel DPAK Power MOSFET 12Amps, 60 Volts
File Size	81.46K / 12 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MTD3055VL1 MTD3055VLT4 MTD3055VL MTD3055VL-D
OCR Text	...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which...
Description	Power MOSFET 12 Amps, 60 Volts 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOSFET 12 Amps, 60 Volts N-Channel DPAK
File Size	84.57K / 12 Page	View it Online	Download Datasheet

				Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTD3055VL MTD3055VL_D ON2500
OCR Text	...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which...
Description	TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM From old datasheet system
File Size	209.10K / 10 Page	View it Online	Download Datasheet

				MOTOROLA INC ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTD3055V MTD3055V_D ON2501
OCR Text	...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which...
Description	TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM From old datasheet system
File Size	205.70K / 10 Page	View it Online	Download Datasheet

For complicate Found Datasheets File :: 777 Search Time::0.968ms
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