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INTEL[Intel Corporation]
Intel Corp.
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| Part No. |
TE28F640C3 TE28F160C3 TE28F800C3 28F160C3 28F320C3 28F640C3 28F800C3 TE28F320C3
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| OCR Text |
...pes defined in Nomenclature are consolidated into the specification update and are no longer published in other documents. This document may also contain information that was not previously published.
Affected Documents/Related Documents... |
| Description |
3 Volt Intel Advanced Boot Block Flash Memory
IC, DIGITAL, 1 GATE SCHMITT-TRIGGER, INVERTER, CMOS, 1.65-5.5V, 4.6NS, SC-70-5,
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| File Size |
112.55K /
18 Page |
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HYNIX[Hynix Semiconductor]
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| Part No. |
GDC21D301A
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| OCR Text |
...em's memory requirements can be consolidated into a single, low-cost DRAM. The GDC21D301A stores data packets destined for the host directly in shared DRAM for easy access by the host.
2. Features
The GDC21D301A is fully compliant with ... |
| Description |
Transport Decoder
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| File Size |
835.96K /
35 Page |
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STMICROELECTRONICS[STMicroelectronics]
意法半导
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| Part No. |
IRF820
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| OCR Text |
...is designed using the company's consolidated strip layout-based MESH OVERLAYTM process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHI... |
| Description |
N - CHANNEL 500V - 2.5ohm - 2.5 A - TO-220 PowerMESH] MOSFET
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| File Size |
91.53K /
8 Page |
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意法半导
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
IRF840 -IRF840
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| OCR Text |
...is designed using the company's consolidated strip layout-based MESH OVERLAYTM process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHI... |
| Description |
N - CHANNEL 500V - 0.75ohm - 8A - TO-220 PowerMESH] MOSFET
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| File Size |
92.21K /
8 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STFV4N150_07 FV4N150 STFV4N150 STFV4N15007
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| OCR Text |
...
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company's propriet... |
| Description |
N-channel 1500V - 5Ω - 4A - TO-220FH Very high voltage PowerMESH?/a> Power MOSFET
N-channel 1500V - 5Ω - 4A - TO-220FH Very high voltage PowerMESH Power MOSFET
N-channel 1500V - 5ヘ - 4A - TO-220FH Very high voltage PowerMESH⑩ Power MOSFET
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| File Size |
221.59K /
13 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STFV4N150 FV4N150
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| OCR Text |
...H
DESCRIPTION Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company's propriet... |
| Description |
N-CHANNEL 1500V - 5-ohm - 4A TO-220FH Very High Voltage PowerMESH-TM MOSFET
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| File Size |
192.39K /
10 Page |
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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STP135N10 STB135N10 STB135N10T4
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| OCR Text |
...ctronics's well established and consolidated STripFET technology utilizing the most recent layout optimization. The device exhibits extremely low on-resistance, gate charge and diode's reverse recovery charge Qrr making it the ideal switch ... |
| Description |
N-CHANNEL 100V - 0.007 OHM - 135A D2PAK/TO-220 LOW GATE CHARGE STRIPFET POWER MOSFET
N-CHANNEL 100V - 0.007 ohm - 135A DPAK/TO-220 LOW GATE CHARGE STripFET POWER MOSFET
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| File Size |
203.57K /
8 Page |
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it Online |
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