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d-34a Datasheet PDF File

For d-34a Found Datasheets File :: 619 Search Time::1.39ms
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				FAIRCHILD[Fairchild Semiconductor]
Part No.	HUFA76639P HUFA76639S3S HUFA76639P3
OCR Text	...39P3 HUFA76639S3S Symbol D Ordering Information PART NUMBER PACKAGE TO-220AB TO-263AB BRAND 76639P 76639S HUFA76639P3 G S ...34A, VGS = 4.5V (Figure 9) THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resist...
Description	50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFETPower MOSFET 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 50A/ 100V/ 0.027 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET
File Size	216.09K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFN150
OCR Text	...e Maximum Ratings Parameter I D @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS I AR EAR dv/dt TJ TSTG Continuou...34A VDS = VGS, ID = 250A VDS > 15V, I DS = 21A VDS = 0.8 x Max Rating,VGS = 0V VDS = 0.8 x Max Rati...
Description	POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.060ohm, Id=34A) POWER MOSFET N-CHANNEL(BVdss=100V Rds(on)=0.060ohm Id=34A)
File Size	181.97K / 6 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRG4PC30FD
OCR Text	... 20 Load Current ( A ) D uty cy cle: 50 % T J = 12 5 C T s ink = 90 C G a te d riv e a s sp ec ified T urn-on los se s inc lude e f...34A M axim um D C C ollector C urrent (A) 30 V C E , Collector-to-Emitter Voltage (V) 2....
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.59V，@和VGE \u003d 15V的，集成电路\u003d 17A条） 600V Fast 1-8 kHz Copack IGBT in a TO-247AC package
File Size	209.00K / 10 Page	View it Online	Download Datasheet

				Vishay Intertechnology, Inc. International Rectifier
Part No.	IRG4PC30 IRG4PC30F IRG4PC30F-EPBF IRG4PC30FPBF
OCR Text	...: Triangular w ave: 40 D uty c y c le : 5 0 % T J = 1 2 5 C T sink = 9 0 C G a te d riv e a s s p e c ifie d P o w er D is s ip a ...34A Maxim um D C Collector C urrent (A ) 30 V C E , Collector-to-Emitter Voltage (V) 2.0...
Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 31 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
File Size	143.46K / 8 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXGH17N100AU1 IXGH17N100U1
OCR Text	...ulse test, t 300 s, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF /dt = 240 A/s VR = 540 V TJ = 125C IF = 1 A; -di/dt = 100 A/s; VR = 30 V T...34A 1.3 V(sat) - Normalized 1.2 1.1 1.0 0.9 0.8 0.7 0.6 IC = 8.5A IC = 17A VCE - Volts ...
Description	Low VCE(sat) IGBT with Diode High speed IGBT with Diode
File Size	110.86K / 6 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation
Part No.	SFH154
OCR Text	... Voltage 40 00 C =C +C (C =sot d) iss gs gd ds h r e C =C +C oss ds gd C =C rss gd 1 5 Fig 6. Gate Charge vs. Gate-Source Voltage C iss Capacitance [pF] 30 00 VGS , Gate-Source Voltage [V] V =3 V 0 DS 1 0 V =7 V 5 DS V =1...
Description	N-CHANNEL POWER MOSFET Advanced Power MOSFET
File Size	227.23K / 6 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF2907ZS-7PPBF IRF2B907ZS-7PPBF
OCR Text	...jmax HEXFET(R) Power MOSFET D VDSS = 75V RDS(on) = 3.8m G S Description Specifically designed for high current, high reliabili...34A BOTTOM 110A TOP RG VGS 20V D.U.T IAS tp + V - DD A 0.01 Fig 12a. Unclamped I...
Description	IRF2907ZS-7PPBF IRF2907ZS - 7PPBF HEXFET? Power MOSFET From old datasheet system
File Size	661.51K / 10 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT10025JLC
OCR Text	D 0.250W S POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFE...34A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Te...
Description	Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs POWER MOS VI 1000V 34A 0.250 Ohm
File Size	34.89K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT10025JVFR
OCR Text	D S POWER MOS V (R) FREDFET Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new t...34A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt VR = 200V APT Re...
Description	Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 34A 0.250 Ohm
File Size	73.43K / 4 Page	View it Online	Download Datasheet

For d-34a Found Datasheets File :: 619 Search Time::1.39ms
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