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  degradation. Datasheet PDF File

For degradation. Found Datasheets File :: 18907    Search Time::1.797ms    
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    NSVS783

New Japan Radio
Part No. NSVS783
OCR Text ...an +85C, it might be a cause of degradation or destruction of the component. Even if it endures during a short time, it causes degradation of qualification. 2. When soldering iron is used, solder with the temperature at the tip of soldering...
Description JRC SAW FILTER

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    PC3H2B PC3H2BD PC3H2AC PC3H2AD PC3H2 PC3H2A PC3H2AB PC3H2BC PC3H2C PC3H2CD PC3H2D

Sharp Electrionic Components
Part No. PC3H2B PC3H2BD PC3H2AC PC3H2AD PC3H2 PC3H2A PC3H2AB PC3H2BC PC3H2C PC3H2CD PC3H2D
OCR Text ...rporates non-coherent IRED. Degradation In general, the emission of the IRED used in photocouplers will degrade over time. In the case of long term operation, please take the general IRED degradation (50% degradation over 5years) into ...
Description Mini-flat Half Pitch Package, High CMR Photocoupler

File Size 176.12K  /  13 Page

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    GP1S97J0000F

Sharp Electrionic Components
Part No. GP1S97J0000F
OCR Text ...rporates non-coherent IRED. Degradation In general, the emission of the IRED used in photointerrupter will degrade over time. In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) i...
Description Gap : 2.2mm, Slit : 0.3mm Phototransistor Output, Compact Transmissive Photointerrupter

File Size 135.98K  /  10 Page

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    AFT09MS015N AFT09MS015NT1

NXP Semiconductors
Part No. AFT09MS015N AFT09MS015NT1
OCR Text ...5 (3 db overdrive) 17 no device degradation 1. measured in 870 mhz narrowband test circuit. 2. measured in 760--870 mhz uhf broadband reference circuit. features ? characterized for operation from 136 to 941 mhz ? unmatched input and output...
Description High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET

File Size 852.39K  /  18 Page

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    AFT09MS007N AFT09MS007NT1

NXP Semiconductors
Part No. AFT09MS007N AFT09MS007NT1
OCR Text ...(3 db overdrive) 10.8 no device degradation 1. measured in 870 mhz narrowband test circuit. 2. measured in 350?470 mhz uhf broadband reference circuit. 3. measured in 450?520 mhz uhf broadband reference circuit. 4. measured in 760?860 mhz u...
Description High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET

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Part No. 1077
OCR Text ... Sample Clock Jitter (For 1 dB Degradation in THD+N with 10 kHz Full-Scale Input, Slow-Settling Mode) 120 96 Max Units dB dB dB -94 -106 -100 -96 -95 0 10 dB dB dB dB dB Degrees ns DIGITAL INPUTS (Guaranteed over 0C TA 70C...
Description From old datasheet system

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Part No. 2868
OCR Text ...CE = 25 V VCE = 25 V 20% No Degradation in Output Device No Degradation in Output Device No Degradation in Output Device 2/7 SD4017 TYPICAL PERFORMANCE DC CURRENT GAIN vs COLLECTOR CURRENT OUTPUT CAPACITANCE vs C-B VOLTAGE ...
Description From old datasheet system

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    AFT05MS006N AFT05MS006NT1

NXP Semiconductors
Part No. AFT05MS006N AFT05MS006NT1
OCR Text ...(3 db overdrive) 10.8 no device degradation 1. measured in 520 mhz narrowband test circuit. 2. measured in 440?520 mhz uhf broadband reference circuit. 3. measured in 760?870 mhz uhf broadband reference circuit. features ? characterized for...
Description High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET

File Size 988.23K  /  23 Page

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Part No. AWL6152_REV_0.1
OCR Text ...smatch stress with no permanent degradation or failure MIN TYP 30 2.5 -32 -30 -45 -50 MAX 0.3 -20 -28 -40 UNIT dB dB % dB dB dB dB within each channel COMMENTS 10:1 245 3.5 2 <10 <-10 -45 -56 - - mA A dB VREF1 = VREF2 = 0 V 50 ...
Description From old datasheet system

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Part No. BGY282_N_5
OCR Text ... - - - 0.4 MHz dB no degradation ruggedness no degradation no degradation 2002 Apr 9 5 Philips Semiconductors Preliminary specification Dual band UHF amplifier module for GSM900 and GSM1800 BGY282 40...
Description From old datasheet system

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For degradation. Found Datasheets File :: 18907    Search Time::1.797ms    
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