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				Maxim Integrated Products
Part No.	DS3050W
OCR Text	... related edges going low to the earlier of the two related edges going high. tWR1 and tDH1 are measured from WE going high. tWR2 and tDH2 are measured from CE going high for SRAM writes or CS going high for RTC writes. tDS is measured from ...
Description	3.3V Single-Piece 4Mb Nonvolatile SRAM with Clock
File Size	210.01K / 18 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	KMM372C804BS
OCR Text	..., t cah are referenced to the earlier cas falling edge. t cp is specified from the last cas rising edge in the previous cycle to the first cas falling edge in the next cycle. t cwd is referenced to the later cas falling edge at...
Description	8M x 72 DRAM DIMM with ECC using 4M16, 4K Refresh, 5V
File Size	447.14K / 19 Page	View it Online	Download Datasheet

				MAXIM - Dallas Semiconductor DALLAS[Dallas Semiconducotr]
Part No.	DS1330W DS1330WP-150-IND 1330W DS1330WP-100 DS1330WP-150
OCR Text	...rite cycle is terminated by the earlier rising edge of CE or WE. All address inputs must be kept valid throughout the write cycle. WE must return to the high state for a minimum recovery time (tWR) before another cycle can be initiated. The...
Description	3.3V 256K Nonovolatile SRAM with Battery Monitor 3.3V 256K Nonvolatile SRAM with Battery Monitor From old datasheet system
File Size	108.31K / 11 Page	View it Online	Download Datasheet

				Maxim Integrated Products, Inc.
Part No.	DS1220Y-200IND
OCR Text	...ite cycle is terminat ed by the earlier rising edge of ce or we . all address inputs must be kept valid throughout the write cycle. we must return to the high state for a minimum recovery time (t wr ) before another cycle can be init...
Description	16K Nonvolatile SRAM 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, DMA24
File Size	370.43K / 9 Page	View it Online	Download Datasheet

				Maxim Integrated Produc... MAXIM[Maxim Integrated Products] MAXIM - Dallas Semiconductor
Part No.	DS38464
OCR Text	...rite cycle is terminated by the earlier rising edge of CE\ or WE\. All address inputs must be kept valid throughout the write cycle. WE\ must return to the high state for a minimum recovery time (tWR) before another cycle can be initiated. ...
Description	3.3V 64k x 40 NV SRAM SIMM
File Size	174.68K / 10 Page	View it Online	Download Datasheet

				Maxim Integrated Products, Inc. HIROSE ELECTRIC Co., Ltd. DALLAS[Dallas Semiconductor] Dallas Semiconducotr MAXIM - Dallas Semiconductor
Part No.	DS1220 DS1220AB DS1220AB-100-IND DS1220AB-120-IND DS1220AB-150-IND DS1220AD DS1220AD-100-IND DS1220AD-120-IND DS1220AD-150-IND DS1220AD-200-IND DS1220AB-200-IND DS1220AD-120 DS1220AD-150 DS1220AB-150
OCR Text	...rite cycle is terminated by the earlier rising edge of CE or WE . All address inputs must be kept valid throughout the write cycle. WE must return to the high state for a minimum recovery time (tWR ) before another cycle can be initiated. T...
Description	16k Nonvolatile SRAM 2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP24 16k Nonvolatile SRAM 2K X 8 NON-VOLATILE SRAM MODULE, 120 ns, PDIP24 16k Nonvolatile SRAM 16K的非易失SRAM M39012 MIL RF CONNECTOR 16K的非易失SRAM
File Size	135.54K / 9 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
Part No.	LE28F4001M LE28F4001R LE28F4001R-15 LE28F4001R-20 LE28F4001T LE28F4001M-15 LE28F4001T-15 LE28F4001M-20 LE28F4001T-20
OCR Text	... edge of WE or CE, whichever is earlier, and the programming operation starts at that point. The completion of the write operation can be detected using either the toggle bit or by polling a Data pin. 5. Reset operation The reset command is...
Description	4MEG (524288words x 8bit) flash memory 4 MEG (524288 words x 8 bits) Flash Memory
File Size	216.11K / 14 Page	View it Online	Download Datasheet

				Maxim Integrated Products, Inc. MAXIM - Dallas Semiconductor DALLAS[Dallas Semiconducotr] DALLAS[Dallas Semiconductor] http://
Part No.	DS1220AB-200-IND DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y-15 1220Y DS1220AB-100-IND DS1220AB-120-IND DS1220AB-150-IND DS1220AD-100-IND DS1220AD-120-IND DS1220AD-150-IND DS1220AD-200-IND
OCR Text	...rite cycle is terminated by the earlier rising edge of CE or WE . All address inputs must be kept valid throughout the write cycle. WE must return to the high state for a minimum recovery time (tWR) before another cycle can be initiated. Th...
Description	2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP24 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 16K Nonvolatile SRAM 2K X 8 NON-VOLATILE SRAM MODULE, 120 ns, PDIP24 16K Nonovolatile SRAM From old datasheet system
File Size	143.29K / 8 Page	View it Online	Download Datasheet

				http:// DALLAS[Dallas Semiconductor] Dallas Semiconducotr MAXIM - Dallas Semiconductor 3M Company
Part No.	DS1350W DS1350W-150 DS1350WP-150-IND 1350W DS1350WP-150
OCR Text	...rite cycle is terminated by the earlier rising edge of CE or WE. All address inputs must be kept valid throughout the write cycle. WE must return to the high state for a minimum recovery time (tWR) before another cycle can be initiated. The...
Description	From old datasheet system 3.3V 4096K Nonvolatile SRAM with Battery Monitor 3.3 4096K非易失SRAM与电池监视器
File Size	108.31K / 11 Page	View it Online	Download Datasheet

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