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  isoplus220 Datasheet PDF File

For isoplus220 Found Datasheets File :: 81    Search Time::1.297ms    
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    DSEE29-12CC

IXYS Corporation
Part No. DSEE29-12CC
OCR Text isoplus220 tm electrically isolated back surface features silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation low cathode to tab capacitance (<15pf) planar pas...
Description HiPerDynFRED Epitaxial Diode(正向电流30AB>HiPerDynFRED外延型二极管)

File Size 58.25K  /  2 Page

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    DSEE8-06CC

IXYS Corporation
IXYS, Corp.
Part No. DSEE8-06CC
OCR Text isoplus220 tm electrically isolated back surface notes: data given for t vj = 25 o c and per diode unless otherwise specified diodes connected in series pulse test: pulse width = 5 ms, duty cycle < 2.0 % pulse test: pulse width =...
Description HiPerDynFRED Epitaxial Diode(HiPerDynFRED外延型二极管) 10 A, 300 V, SILICON, RECTIFIER DIODE

File Size 61.03K  /  2 Page

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    IXYS
Part No. IXGC16N60B2
OCR Text ...gbt b2-class high speed igbt in isoplus220 tm case electrically isolated back surface ixgc 16n60b2 ixgc 16n60b2d1 v ces = 600 v i c25 =28a v ce(sat) = 2.3 v t fi(typ) =80ns d1 g c e isoplus 220 tm (ixgc) isolated back surface* features...
Description IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT

File Size 497.30K  /  2 Page

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    IXFC30N60P

IXYS Corporation
Part No. IXFC30N60P
OCR Text ...) 20..120 / 4.5..25 n/lb weight isoplus220 2 g isoplus247 5 g ixfc 30n60p ixfr 30n60p electrically isolated back surface g = gate d = drain s = source features
Description PolarHV HiPerFET Power MOSFET

File Size 131.22K  /  4 Page

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    IXYS
Part No. CS29-08IO1C CS29-12IO1C
OCR Text ...(11/03) phase control thyristor isoplus220 tm electrically isolated back surface preliminary data sheet a c g isoplus 220 tm isolated back surface* c a g a = anode; c = cathode; g = gate cs 29 ? 2003 ixys all rights reserved symbol condit...
Description Phase Control Thyristors: PowerThyristor for Line Frequency Rectification

File Size 517.55K  /  3 Page

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    IXYS
Part No. DSEE29-06CC
OCR Text isoplus220 tm electrically isolated back surface features
Description Fast Recovery Diodes

File Size 517.60K  /  2 Page

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    IXYS
Part No. DSEE8-06CC
OCR Text isoplus220 tm electrically isolated back surface notes: data given for t vj = 25 o c and per diode unless otherwise specified
Description Fast Recovery Diodes

File Size 505.76K  /  2 Page

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    IXFC12N80P

IXYS Corporation
Part No. IXFC12N80P
OCR Text ...larhv tm hiperfet power mosfet isoplus220 tm (electrically isolated back surface) features
Description PolarHV HiPerFET Power MOSFET isoplus220

File Size 193.30K  /  2 Page

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    IXYS
Part No. DSS20-01AC
OCR Text ...sions. power schottky rectifier isoplus220 tm electrically isolated back surface features silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation low cathode to tab ca...
Description Silicon Schottky Diodes

File Size 112.58K  /  4 Page

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    100N055

IXYS Corporation
Part No. 100N055
OCR Text ...osfet ixuc100n055 v dss = 55 v isoplus220 tm i d25 = 100 a electrically isolated back surface r ds(on) = 7.7 m 98760 (11/00) g d s advanced technical information tm features silicon chip on direct-copper-bond substrate - ...
Description Search --To IXUC100N055

File Size 417.01K  /  2 Page

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