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New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
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| Part No. |
MDA918 MD918A MD918B MD918BF MD918AF MD918F
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| OCR Text |
...dittca 4. omitted ? emrter 1 mm j.couectos b. ohitteo cateatwl? mm1 mini md91 r. t' if style 1 pini u 1. i t. e t. u 7. c 1- c cam jeattn ru...die occurl. the junction temperature cm be calculated ?i follows: 111 pd1 where atjj is the chang* i... |
| Description |
MULTIPLE SILICON ANNULAR TRANSISTORS
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| File Size |
103.35K /
2 Page |
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| Part No. |
IRGC100B120KB
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| OCR Text |
...2v min, 1.29v max i c = 10a, t j = 25c, v ge = 15v v (br)ces collector-to-emitter breakdown voltage 1200v min t j = 25c, i ces = 1ma, v ge = 0v v ge(th) gate threshold voltage 4.4v min, 6.0v max v ge = v ce , t j =25c, i c ... |
| Description |
1200 V, N-CHANNEL IGBT
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| File Size |
18.09K /
1 Page |
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| Part No. |
IRGC49B120UB
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| OCR Text |
...0v min, 2.25v max i c = 10a, t j = 25c, v ge = 15v v (br)ces colletor-to-emitter breakdown voltage 1200v min t j = 25c, i ces = 500a, v...die: wi dt h & not es : 2. cont rol ling dimens ion: [inch]. 3. letter designation: 4. dime ns io... |
| Description |
1200 V, N-CHANNEL IGBT
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
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| File Size |
15.03K /
1 Page |
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SKYWORKS SOLUTIONS INC
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| Part No. |
APD0520-219
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| OCR Text |
...ion p dis case to junction j ce tan sis re thermal temp case t maximum ? ? ? w reverse voltage v r see voltage rating column ...die drawing switching applications apd0505-000 1.5 150-806 apd0510-000 2.5 150-801 apd0520-000... |
| Description |
50 V, SILICON, PIN DIODE
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| File Size |
427.31K /
7 Page |
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| Part No. |
DD46S8K
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| OCR Text |
...m e w i d e r s t a n d z t h j c f r e i n e n z w e i g 1 0 - 3 1 0 - 2 1 0 - 1 1 0 0 1 0 2 3 4 5 6 2 3 4 5 6 2 3 4 5 6 2 3 4 5 6...die in diesem produktdatenblatt enthaltenen daten sind ausschlie? lich fr technisch geschultes fachp... |
| Description |
64 A, 800 V, SILICON, RECTIFIER DIODE
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| File Size |
202.10K /
4 Page |
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| Part No. |
IRGC5B60KB
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| OCR Text |
....0v min, 1.25v max i c = 1a, t j = 25c, v ge = 15v v (br)ces colletor-to-emitter breakdown voltage 600v min t j = 25c, i ces = 1ma, v g...die: wi dt h bonding pads: sk = source kelvin is = currentsense g = gat e s = source e = emitte... |
| Description |
600 V, N-CHANNEL IGBT
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| File Size |
14.96K /
1 Page |
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| Part No. |
IRGC5B120UB
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| OCR Text |
...min., 3.64v max. i c = 2.5a, t j = 25c, v ge = 15v v (br)ces collector-to-emitter breakdown voltage 1200v min. t j = 25c, i ces = 100a,...die: widt h bonding pads: sk = source kelvin is = curre nt s e ns e g = gat e s = source e = e... |
| Description |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
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| File Size |
14.78K /
1 Page |
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it Online |
Download Datasheet |
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