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				STMicroelectronics
Part No.	VNP7N04-E
OCR Text	... v i d drain current internally limited a i r reverse dc output current -7 a v esd electrostatic discharge (c= 100 pf, r=1.5 k w ) 2000 v p tot total dissipation at t c = 25 o c3 1 w t j operating junction temperature internally limited o...
Description	OMNIFET: FULLY AUTOPROTECTED POWER MOSFET
File Size	361.68K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRSF3010
OCR Text	...-55 -55 -- Max. 50 10 self limited Units Test Conditions V 40 0.33 400 4000 1000 self-limited 175 300 W W/C mJ V Tc 25C 1000pF. 1.5k 200pF, 0 o C Static Electrical Characteristics (Tc = 25C unless otherwise s...
Description	FULLY PROTECTED POWER MOSFET SWITCH(Vds=50V, Rds(on)=80mohm)
File Size	419.25K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLZ44ZSPBF IRLZ44Z IRLZ44ZL IRLZ44ZLPBF IRLZ44ZPBF IRLZ44ZS
OCR Text	...PD @TC = 25C VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon limited) Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-So...
Description	AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5mΩ , ID = 51A) AUTOMOTIVE MOSFET (VDSS = 55V , RDS(on) =13.5mヘ , ID = 51A)
File Size	355.55K / 13 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STU8N80K5
OCR Text	... c 4 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 24 a p tot total dissipation at t c = 25 c 110 w i ar (2) 2. pulse width limited by t jmax. max current during repetitive or single pulse avalanche ...
Description	N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in TO-220 and IPAK packages N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in TO-220 and IPAK packages
File Size	1,165.94K / 16 Page	View it Online	Download Datasheet

				New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P... New Jersey Semiconductors
Part No.	STP5NA80 STP5NA80FI STP5NA50
OCR Text	... a a w w/c v c c ?) pulse width limited by safe operating area nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed ...
Description	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR Trans MOSFET N-CH 500V 5A 3-Pin(3 Tab) TO-220
File Size	1,014.80K / 3 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STOD13A STOD13ATPUR
OCR Text	... operation of the device is not limited to the choice of these external components. inductor values ranging from 3.3 h to 6.8 h can be used together with the stod13a. en en vina cmid vmid l1 lx1 vinp cin s wire s -wire vbat vref cref lx2 l...
Description	250 mA dual DC-DC converter for powering AMOLED displays
File Size	900.70K / 24 Page	View it Online	Download Datasheet

				Silikron Semiconductor Co.,LTD. Silikron Semiconductor Co.,...
Part No.	SSF2116EJ3
OCR Text	...rent, v gs @ 10v (silicon limited) 8.5 a i d @ tc = 25c continuous drain current, v gs @ 10v (package limited) 75 i dm pulsed drain current 34 v gs g ate to source voltage 10 v p d @tc = ...
Description	Advanced MOSFET process technology
File Size	327.40K / 6 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	L6375D L6375
OCR Text	...TJ = 85C Value 50 40 internally limited -0.3 to 7 1 internally limited internally limited internally limited -0.3 to 40 -10 to 10 20 -10 to Vs +0.3 -25 to 85 -25 to 125 -55 to 150 200 V mA mA V C C C mJ V V mA Unit V V Vs -Vout Vod Io...
Description	0.5A INDUSTRIAL INTELLIGENT POWER SWITCH
File Size	83.56K / 12 Page	View it Online	Download Datasheet

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