|
|
 |
Renesas
|
Part No. |
RJP30E3DPP-M0
|
OCR Text |
m0 silicon n channel igbt high speed power switching features ? trench gate technology (g5h series) ? low collector to emitter satu...5 ? 5 v v ce = 10 v, i c = 1 ma collector to emitter saturation voltage v ce(sat) ? 1.6 2.1 v ... |
Description |
N-Channel Power MOSFET
|
File Size |
246.31K /
7 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Renesas
|
Part No. |
RJP30H1DPP-M0
|
OCR Text |
m0 silicon n channel igbt high speed power switching features ? trench gate and thin wafer technology (g6h-ii series) ? high speed...5 v typ. ? low leak current: i ces = 1 ? a max. ? isolated package to-220fl outline ren... |
Description |
N-Channel Power MOSFET
|
File Size |
206.95K /
7 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Renesas
|
Part No. |
RJP30H2DPK-M0
|
OCR Text |
m0 silicon n channel igbt high speed power switching features ? trench gate and thin wafer technology (g6h-ii series) ? low collect...5 ? 5 v v ce = 10 v, i c = 1 ma collector to emitter saturation voltage v ce(sat) ? 1.4 1.... |
Description |
N-Channel Power MOSFET
|
File Size |
215.90K /
7 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Renesas
|
Part No. |
RJP63F3DPP-M0
|
OCR Text |
m0 silicon n channel igbt high speed power switching features ? trench gate and thin wafer technology (g6h series) ? low collector...5 ? 5 v v ce = 10 v, i c = 1 ma collector to emitter saturation voltage v ce(sat) ? 1.7 2.... |
Description |
N-Channel IGBT
|
File Size |
235.22K /
7 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|