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Cornell Dubilier Electronics, Inc.
Fujitsu, Ltd.
NEC[NEC]
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| Part No. |
NP100P06PDG-E2-AY NP100P06PDG NP100P06PDG-E1-AY
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| OCR Text |
...* High current rating: ID(DC) = m100 A
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC)... |
| Description |
100 A, 60 V, 0.0078 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN
100 A, 60 V, 0.0078 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB MP-25ZP, TO-263, 3 PIN
MOS FIELD EFFECT TRANSISTOR
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| File Size |
180.37K /
7 Page |
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NEC[NEC]
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| Part No. |
NP100P06PLG-E2-AY NP100P06PLG NP100P06PLG-E1-AY
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| OCR Text |
...* High current rating: ID(DC) = m100 A * Built-in gate protection diode (TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pul... |
| Description |
MOS FIELD EFFECT TRANSISTOR
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| File Size |
179.04K /
7 Page |
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it Online |
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NEC[NEC]
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| Part No. |
NP36P04KDG-E2-AY NP36P04KDG NP36P04KDG-E1-AY
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| OCR Text |
... 0
MIN.
TYP.
MAX. -10 m100
UNIT
A
nA V S
-1.0 12
-1.6 22 12.8 16.6 2800 450 280 8 10 250 140
-2.5
Drain to Source On-state Resistance
17.0 23.5
m m pF pF pF ns ns ns ns nC nC nC
Input Capacitance Output... |
| Description |
MOS FIELD EFFECT TRANSISTOR
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| File Size |
178.94K /
7 Page |
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it Online |
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NEC[NEC]
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| Part No. |
NP36P06KDG-E2-AY NP36P06KDG NP36P06KDG-E1-AY
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| OCR Text |
... 0
MIN.
TYP.
MAX. -10 m100
UNIT
A
nA V S
-1.0 12
-1.6 23 23.1 27.0 3100 350 205 8 11 210 110
-2.5
Drain to Source On-state Resistance
29.5 37.5
m m pF pF pF ns ns ns ns nC nC nC
Input Capacitance Output... |
| Description |
MOS FIELD EFFECT TRANSISTOR
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| File Size |
176.67K /
7 Page |
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it Online |
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Diodes, Inc.
NEC[NEC]
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| Part No. |
NP50P04KDG-E2-AY NP50P04KDG NP50P04KDG-E1-AY
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| OCR Text |
... 0
MIN.
TYP.
MAX. -10 m100
UNIT
A
nA V S
-1.0 15
-1.6 30 7.9 9.8 5100 790 440 20 45 405 230
-2.5
Drain to Source On-state Resistance
10 15
m m pF pF pF ns ns ns ns nC nC nC
Input Capacitance Output Capa... |
| Description |
50 A, 40 V, 0.015 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZK, TO-263, 3 PIN
MOS FIELD EFFECT TRANSISTOR
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| File Size |
170.73K /
7 Page |
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it Online |
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NEC[NEC]
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| Part No. |
NP50P06KDG-E2-AY NP50P06KDG NP50P06KDG-E1-AY
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| OCR Text |
... 0
MIN.
TYP.
MAX. -10 m100
UNIT
A
nA V S
-1.0 15
-1.6 30 13.5 15.4 5000 600 300 20 45 405 270
-2.5
Drain to Source On-state Resistance
17 23
m m pF pF pF ns ns ns ns nC nC nC
Input Capacitance Output Ca... |
| Description |
MOS FIELD EFFECT TRANSISTOR
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| File Size |
174.18K /
7 Page |
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TRIPATH[Tripath Technology Inc.]
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| Part No. |
RB-TA3020-2 RB-TA3020-1 RB-TA3020
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| OCR Text |
...
Figure 2
HEATSINK
OUT1 m100 GND1 AGND
Ch1 Offset
-+
28V (-1 VERSION) 45V (-2 VERSION)
IN1 AGND V5 VPP PGND VNN VN10 M201 HMUTE LED AGND IN2 M200 Ch2 Offset TA3020 AUDIO SOURCE
M101
28V (-1 VERSION) 45V (-2 VERSION... |
| Description |
CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING (DPP) TECHNOLOGY
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| File Size |
734.04K /
20 Page |
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it Online |
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NEC[NEC]
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| Part No. |
UPA2711GR
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| OCR Text |
....
TYP.
MAX.
UNIT
-1 m100 -1.0
10 22 7.4 10 12 2450 740 410 10 15 230 130 9 15 20
A A
V S m m m pF pF pF ns ns ns ns nC nC nC V ns nC
-2.5
Drain to Source On-state Resistance
Input Capacitance Output Capacitance Rev... |
| Description |
SWITCHING N- AND P-CHANNEL POWER MOS FET
SWITCHING P-CHANNEL POWER MOSFET
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| File Size |
145.11K /
7 Page |
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it Online |
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NEC[NEC]
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| Part No. |
UPA2712GR
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| OCR Text |
...ns ns ns ns nC nC nC V ns nC
m100
-2.5
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = -20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS(-) RL VDD VDS(-)
90% 90% 10% 10%
VGS
Wave Form
... |
| Description |
SWITCHING N- AND P-CHANNEL POWER MOS FET
SWITCHING P-CHANNEL POWER MOSFET
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| File Size |
87.56K /
8 Page |
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it Online |
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NEC[NEC]
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| Part No. |
UPA2730TP UPA2730TP-AZ UPA2730TP-E2 UPA2730TP-E1
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| OCR Text |
...= 10 MIN. TYP. MAX. UNIT
-1 m100 -1.0
14 30 5.7 7.7 8.8 4670 1220 760 20 28 190 110 97 10 32 0.81 65 62 7.0 10.5 12.0
A
nA V S m m m pF pF pF ns ns ns ns nC nC nC V ns nC
-2.5
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = ... |
| Description |
Pch enhancement-type MOS FET
SWITCHING P-CHANNEL POWER MOSFET
SWITCHING N- AND P-CHANNEL POWER MOS FET
42000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, HSOP-8
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| File Size |
78.46K /
8 Page |
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it Online |
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Price and Availability
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