mobility pdf Datasheet P5 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : MAX38 E058A40 2SD2499 AN5551 ADG512BN H1270NL DG261208 LM129BH
	Product Description
	Full Text Search

mobility Datasheet PDF File

For mobility Found Datasheets File :: 592 Search Time::13.328ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor Mitsubishi Electric, Corp.
Part No.	MGF4714CP 4714CP
OCR Text	...CP low-noise HEMT(High Electron mobility Transistor) is designed for use in L to Ku band amplifiers. The plastic mold package offer high cost performance, and has a configuration suitable for microstrip circuits. The MGF4714CP is mounted in...
Description	From old datasheet system PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT 塑料模具包装低噪音铟镓砷迁移率晶体管
File Size	16.89K / 3 Page	View it Online	Download Datasheet

				Skyworks Solutions Inc.
Part No.	SKY74073
OCR Text	...ion Pseudomorphic High Electron mobility Transistor (PHEMT), Single Pole Double Throw (SPDT) GaAs switches. The switches typically draw less than 10 A of current during operation and are designed for low insertion loss and high linearity pe...
Description	Dual-Band SPR™ Module for GSM and GPRS Handset Applications SKY74073: Dual-Band SPR?/a> Module for GSM and GPRS Handset Applications SKY74073: Dual-Band SPR⑩ Module for GSM and GPRS Handset Applications SKY74073: Dual-Band SPR Module for GSM and GPRS Handset Applications
File Size	69.75K / 2 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	NE434S01 NE434S01-T1B NE434S01-T1
OCR Text	... hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems. 1 2.0 0.2 2. PACKAGE DIMENSIONS (Unit: mm) 0 FEATURES * * Super ...
Description	C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
File Size	75.30K / 12 Page	View it Online	Download Datasheet

				Fujitsu Microelectronics Fujitsu, Ltd. Fujitsu Limited FUJITSU[Fujitsu Media Devices Limited] Fujitsu Component Limited. FUJITSU LTD
Part No.	FHX35LG_002 FHX35LG FHX35X FHX35X_002 FHX35LG/002 FHX35X/002
OCR Text	...devices are HEMT (High Electron mobility Transistor) ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems. This HEMT combines high transconductance, low gate capacitance and low leakage...
Description	Low Noise HEMT Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
File Size	154.04K / 4 Page	View it Online	Download Datasheet

				Fujitsu Component Limited. FUJITSU[Fujitsu Media Devices Limited] N.A.
Part No.	FHX04LG FHX05LG FHX06LG
OCR Text	...5LG, FHX06LG is a High Electron mobility Transistor(HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range.The devices are packaged in cost effective, low parasitic, hermetically sealed metal-c...
Description	Super Low Noise HEMT
File Size	111.86K / 5 Page	View it Online	Download Datasheet

				Motorola
Part No.	MC68SZ328 MC68SZ328P
OCR Text	...ers where they want to go--with mobility, connectivity, scalability, and enhanced freedom. 1 Block Diagram Figure 1 is a simplified functional block diagram of the MC68SZ328. System Control ICEM Bootstrap Power Control CGM...
Description	MC68SZ328 (DragonBall? Super VZ) Integrated Portable System Processor Product Brief From old datasheet system
File Size	66.91K / 12 Page	View it Online	Download Datasheet

				FILTRONIC[Filtronic Compound Semiconductors]
Part No.	LP3000SOT89-3 LP3000SOT89 LP3000SOT89-1 LP3000SOT89-2
OCR Text	...As) pseudomorphic High Electron mobility Transistor (pHEMT). It utilizes a 0.25 m x 3000 m Schottky barrier gate, defined by electron-beam photolithography. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate res...
Description	LOW NOISE, HIGH LINEARITY PACKAGED PHEMT LOW NOISE HIGH LINEARITY PACKAGED PHEMT LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
File Size	43.62K / 3 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC] Electronic Theatre Controls, Inc.
Part No.	ACX300 ACX302AK ACX300AK ACX301AK
OCR Text	... advantage of not only the high-mobility transistor performance, which is a feature of the low-temperature polysilicon TFT, but also high aperture ratio pixel design, Sony succeeded in increasing the horizontal resolution by 20% over earlie...
Description	Low-temperature Polysilicon TFT LCDs 12 AMP MINIATURE PC BOARD RELAY 低温多晶硅TFT液晶显示
File Size	38.53K / 2 Page	View it Online	Download Datasheet

				FILTRONIC[Filtronic Compound Semiconductors]
Part No.	FP1510SOT89
OCR Text	...As) pseudomorphic High Electron mobility Transistor (pHEMT). It utilizes a 0.10 m x 1500 m Schottky barrier gate, defined by electron-beam photolithography. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate res...
Description	LOW NOISE, HIGH LINEARITY PACKAGED PHEMT LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
File Size	136.74K / 3 Page	View it Online	Download Datasheet

				Motorola, Inc
Part No.	MRF9822T1
OCR Text	... Pseudomorphic High Electron mobility Transistor Designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems. * Performance Specifications at 3.5 V, 850 MHz: Output Pow...
Description
File Size	65.02K / 4 Page	View it Online	Download Datasheet

For mobility Found Datasheets File :: 592 Search Time::13.328ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |