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  pd-mos Datasheet PDF File

For pd-mos Found Datasheets File :: 9592    Search Time::1.797ms    
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    LV5818M

Sanyo Semicon Device
Part No. LV5818M
OCR Text ...v allowable power dissipation pd max mount on a specified board * 1.65 w junction temperature tj max 150 c operating temperature ...mos transistor boot strap capacitance connection pin. connect the boot capaci tance of about 0.01 ...
Description Step-down Switching Regulator

File Size 230.00K  /  6 Page

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    LV5810M

Sanyo Semicon Device
Part No. LV5810M
OCR Text ...v allowable power dissipation pd max mount on a specified board * 1.15 w junction temperature tj max 150 c operating temperature ...mos transistor boot st r ap capacitance connection pin. no.a1558-4/5 connect the boot capaci tance...
Description Step-down Switching Regulator

File Size 179.12K  /  5 Page

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    TC7S14F09

Toshiba Semiconductor
Part No. TC7S14F09
OCR Text .... features ? high speed: t pd = 11 ns (typ.) at v cc = 5 v ? low power dissipation: i cc = 1 a (max) at ta = 25c ? high noise immunity: v h = 1.1 v at v cc = 5 v ? output drive capability: 5 lsttl loads ? symme...
Description TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

File Size 147.26K  /  7 Page

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    LV51138T11 LV51138-T

ON Semiconductor
Sanyo Semicon Device
Part No. LV51138T11 LV51138-T
OCR Text ... allowable power dissipation pd max independent ic 170 mw operating ambient temperature topr -30 to +85 c storage temperature ts...mos fet after the over-charge detection delay time. this delay time is set by the internal counter...
Description 2-Cell Lithium-Ion Secondary Battery Protection IC

File Size 180.04K  /  8 Page

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    LV51137T11 LV51137T

ON Semiconductor
Sanyo Semicon Device
Part No. LV51137T11 LV51137T
OCR Text ... allowable power dissipation pd max independent ic 170 mw operating ambient temperature topr -30 to +85 c storage temperature ts...mos fet after the over-charge detection delay time. this delay time is set by the internal counter...
Description 2-Cell Lithium-Ion Secondary Battery Protection IC

File Size 180.05K  /  8 Page

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    LV51135T11 LV51135T

ON Semiconductor
Sanyo Semicon Device
Part No. LV51135T11 LV51135T
OCR Text ... allowable power dissipation pd max independent ic 170 mw operating ambient temperature topr -30 to +80 c storage temperature ts...mos fet after the over-charge detection delay time. this delay time is set by the internal counter...
Description 2-Cell Lithium-Ion Secondary Battery Protection IC

File Size 181.04K  /  8 Page

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    LV51134T11

Sanyo Semicon Device
Part No. LV51134T11
OCR Text ... allowable power dissipation pd max independent ic 170 mw operating ambient temperature topr -30 to +80 c storage temperature ts...mos fet after the over-charge detection delay time. this delay time is set by the internal counter...
Description 2-Cell Lithium-Ion Secondary Battery Protection IC

File Size 180.42K  /  8 Page

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    ST Microelectronics
Part No. STLC3055N
OCR Text ...it figure 2. block diagram pd d0 d1 d2 det rttx cac iltf rd ...mos transistor (p-channel). 24 rsense voltage input for current sensing. rsense should be connected ...
Description WLL & ISDN-TA SUBSCRIBER LINE INTERFACE CIRCUIT

File Size 318.10K  /  25 Page

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    2SK601 2SK0601

Panasonic, Corp.
Panasonic Semiconductor
Part No. 2SK601 2SK0601
OCR Text ...40.04 Symbol VDS VGSO ID IDP PD * Ratings 80 20 0.5 1 1 150 -55 to +150 Unit 3 2 1 V V A A W C C 1: Gate 2: Drain 3: Source E...MOS FETs (Small Signal) PD Ta 1.6 1.2 Copper foil of the drain portion should have a area of 1cm2...
Description Silicon N-Channel MOS FET 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

File Size 33.97K  /  2 Page

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    2SK614

PANASONIC[Panasonic Semiconductor]
Part No. 2SK614
OCR Text ...perature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 80 20 0.5 1 750 150 -55 to +150 Unit V V A 0.45 -0.1 +0.2 0.45 -0.1 +0.2 ...MOS FETs (Small Signal) PD Ta 1200 1.2 Ta=25C 1.0 VGS=5.5V 1.0 2SK614 ID VDS 1.2 VDS=10V Ta...
Description Silicon N-Channel MOS FET

File Size 33.14K  /  2 Page

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