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TriQuint Semiconductor,Inc.
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| Part No. |
TGA8659-FL
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| OCR Text |
...ce by setting v g to C1.5v. 3) raise v d to 7.0v while monitoring drain current. 4) raise v g until drain current reaches 1.3 a. v g should be between C0.6v and C0.3v. 5) apply rf power. gaas mmic devices are susceptible to damage fr... |
| Description |
13 - 15 GHz 4W Power Amplifier
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| File Size |
282.64K /
8 Page |
 View
it Online |
Download Datasheet
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TriQuint Semiconductor,Inc.
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| Part No. |
TGA8658-EPU-SG
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| OCR Text |
...e by setting v g to C1.5v. 3. raise vd to 7.0v while monitoring drain current. 4. raise v g until drain current reaches 680 ma. 5. apply rf power. packaged dimensional drawing tga8658 - sg gaas mmic devices are susceptible to damage fro... |
| Description |
Ku Band 2W Packaged Amplifier
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| File Size |
106.18K /
8 Page |
View
it Online |
Download Datasheet |
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TriQuint Semiconductor, Inc.
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| Part No. |
TGA1328-SCC
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| OCR Text |
...ce by setting vg to ?2.5v. 3) raise vd to 8.0v while monitoring drain current. current should be zero. note: vd bias should be applied to the rf output port via a bias tee for high power bias . 4) raise vctl to 1.0v (no great... |
| Description |
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| File Size |
912.92K /
10 Page |
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it Online |
Download Datasheet |
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