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    Hyundai Electronics
Part No. HY5117404C
OCR Text ...access time(50, 60 or 70ns) and refresh cycle(2k ref. or 4k ref.) and power consumption (normal or low power with self refresh). hyundai ? s advanced circuit design and process technology allow this device to achieve high bandwidth, low pow...
Description (HY5116404C / HY5117404C) Extended Data Out Mode

File Size 282.77K  /  9 Page

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    KMM53216004CK KMM53216004CKG

Samsung semiconductor
Part No. KMM53216004CK KMM53216004CKG
OCR Text ... x 32 DRAM SIMM Using 16Mx4, 4k refresh, 5V GENERAL DESCRIPTION The Samsung KMM53216004C is a 16Mx32bits Dynamic RAM high density memory module. The Samsung KMM53216004C consists of eight CMOS 16Mx4bits DRAMs in SOJ packages mounted on a ...
Description 16M x 32 DRAM SIMM Using 16Mx4, 4k refresh, 5V

File Size 439.97K  /  21 Page

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    PROMOS TECHNOLOGIES INC
Part No. V54C3128404VCS6I
OCR Text ...-n rule) power down mode auto refresh and self refresh refresh interval: 4096 cycles/64 ms available in 54 pin tsop ii, 54 ball bga, 60 ...4k : 6516 pc : cl2 type 32mx4, 4k : 12840 8mx16, 4k : 12816 blank: cl3 54 : sdram 16mx8, 4k : 12880 ...
Description 32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PBGA60

File Size 636.57K  /  56 Page

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    M53230400CB0 M53230400CW0 M53230410CW0

Samsung Semiconductor
Part No. M53230400CB0 M53230400CW0 M53230410CW0
OCR Text refresh, 5V GENERAL DESCRIPTION The Samsung M5323040(1)0C is a 4Mx32bits Dynamic RAM high density memory module. The Samsung M5323040(1)0C...4k Ref) Address Inputs(2K Ref) Data In/Out Read/Write Enable Row Address Strobe Column Address Strob...
Description (M532304x0CB0/CW0) DRAM Module

File Size 424.66K  /  15 Page

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    M53230400DB0

Samsung Semiconductor
Part No. M53230400DB0
OCR Text refresh, 5V GENERAL DESCRIPTION The Samsung M5323040(1)0D is a 4Mx32bits Dynamic RAM high density memory module. The Samsung M5323040(1)0D...4k Ref) Address Inputs(2K Ref) Data In/Out Read/Write Enable Row Address Strobe Column Address Strob...
Description (M532304x0DB0/DW0) DRAM Module

File Size 429.26K  /  15 Page

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    MT4LC4M16N3 MT4LC4M16R6TG-6

Micron Technology
Part No. MT4LC4M16N3 MT4LC4M16R6TG-6
OCR Text ...96-cycle cas#-before-ras# (cbr) refresh distributed across 64ms  optional self refresh (s) for low-power data retention options marking  p...4k r6 8k n3 standard refresh none self refresh s*  operating temperature range commercial (0c to +7...
Description    DRAM

File Size 468.74K  /  24 Page

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    M53230404BT0-C

Samsung Semiconductor
Part No. M53230404BT0-C
OCR Text ... x 32 DRAM SIMM Using 4Mx16, 4k refresh, 5V GENERAL DESCRIPTION The Samsung M53230404BY0/BT0-C is a 4Mx32bits Dynamic RAM high density memory module. The Samsung M53230404BY0/BT0-C consists of two CMOS 4Mx16bits DRAMs in TSOP packages mou...
Description (M53230404BT0/BY0) DRAM Module

File Size 550.67K  /  21 Page

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