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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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Part No. |
MIG100J7CSB1W
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Description |
MINIATURE power RELAY 东芝智能功率模块IGBT的硅频道 TOSHIBA Intelligent power Module silicon N Channel IGBT Intelligent power Module silicon N Channel IGBT High power Switching Applications Motor Control Applications
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File Size |
174.48K /
11 Page |
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it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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Part No. |
MJE1300906 MJE13009G MJE13009
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Description |
SWITCHMODE Series NPN silicon power Transistors(开关模式系列NPN硅功率晶体管) 12 A, 400 V, NPN, Si, power TRANSISTOR, TO-220AB 12 AMPERE NPN silicon power TRANSISTOR 400 VOLTS − 100 WATTS
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File Size |
145.32K /
10 Page |
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it Online |
Download Datasheet |
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Microsemi, Corp. MICROSEMI[Microsemi Corporation]
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Part No. |
S35100 R35140 S3560 S3520 S3580 S3540 R3580 1N4137 R35100 R35120 R35160 R3520 R3540 R3560 S35 S3510 S35120 S35140 S35160
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Description |
silicon power Rectifier 70 A, 600 V, silicon, RECTIFIER DIODE, DO-203AB silicon power Rectifier 70 A, 1400 V, silicon, RECTIFIER DIODE, DO-203AB silicon power Rectifier 70 A, 1600 V, silicon, RECTIFIER DIODE, DO-203AB
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File Size |
118.84K /
3 Page |
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it Online |
Download Datasheet |
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NTE[NTE Electronics]
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Part No. |
NTE5811 NTE5891 NTE5810 NTE5870 NTE5890 NTE5874 NTE5880
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Description |
silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A. 12 A, 1000 V, silicon, RECTIFIER DIODE, DO-4 silicon power Rectifier Diode / 12 Amp silicon power Rectifier Diode 12 Amp silicon power Rectifier Diode, 12 Amp silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.
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File Size |
23.18K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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