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GeneSiC Semiconductor, Inc.
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Part No. |
GB10SLT12-CAL
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OCR Text |
...ced switching losses compare to si pin diodes ? ease of paralleling devices without thermal runaway ? smaller heat sink requirements ...sic/baredie pg 2 of 2 ... |
Description |
silicon Carbide Power Schottky Diode
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File Size |
207.90K /
3 Page |
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it Online |
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Cree, Inc.
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Part No. |
CRF24060D
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OCR Text |
...nd wider bandwidths compared to si and gaas transistors. features 13 db small signal gain at 1.5 ghz 60 w typical p 1db 48 v operation high breakdown voltage high temperature operation up to 5 ghz operation high effciency ? ? ? ? ? ? ? appl... |
Description |
60 W siC RF Power MESFET Die
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File Size |
709.41K /
8 Page |
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it Online |
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GeneSiC Semiconductor, Inc.
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Part No. |
GB50SLT12-CAL
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OCR Text |
...ced switching losses compare to si pin diodes ? ease of paralleling devices without thermal runaway ? smaller heat sink requirements ...sic/high-temperature-sic-bare-die/ page 2 of 2 figure 1: typical forward characteristics... |
Description |
silicon Carbide Power Schottky Diode Chip
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File Size |
205.91K /
3 Page |
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it Online |
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CREE
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Part No. |
CPMF-1200-S160B
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OCR Text |
...han is usually experienced with si mosfets and igbts. this might affect the operation anti-desaturation circuits, especially if the circui...sic dmosfet is considerably lower. in fact, the product of gate voltage swing and gate charge for ... |
Description |
silicon Carbide MOSFET
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File Size |
516.97K /
10 Page |
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it Online |
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GeneSiC Semiconductor, ...
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Part No. |
GA10JT12-263
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OCR Text |
...ications ? compatible with si mosfet/igbt gate drive ics ? > 20 s short-circuit withstand capability ? lowest-in-class conductio...sic/sic-junction-transistors/ pg2 of 11 section ii: static electrical characteristics a: on sta... |
Description |
Normally ?OFF silicon Carbide Junction Transistor
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File Size |
908.85K /
12 Page |
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it Online |
Download Datasheet
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CREE[Cree, Inc]
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Part No. |
CRF24060
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OCR Text |
...nd wider bandwidths compared to si and GaAs transistors.
Package Type : 440193 PN: CRF240 60F
FEATURES * * * * * * * 13 dB Small signal Gain High Efficiency 50 W minimum P1dB Up to 2400 MHz Operation 48 V Operation High Breakdown Volt... |
Description |
60 W, siC RF Power MESFET
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File Size |
542.87K /
10 Page |
View
it Online |
Download Datasheet
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GeneSiC Semiconductor, ...
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Part No. |
GA10JT12-CAL
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OCR Text |
...ications ? compatible with si mosfet/igbt gate drive ics ? > 20 s short-circuit withstand capability ? lowest-in-class conductio...sic/high-temperature-sic-bare-die/ pg2 of 7 section ii: static electrical characteristics a: on ... |
Description |
Normally ?OFF silicon Carbide Junction Transistor
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File Size |
480.34K /
8 Page |
View
it Online |
Download Datasheet
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Price and Availability
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