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New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P...
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Part No. |
D40D1 D40D2 D40D8 D40D7 D40D4 D40D5
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OCR Text |
...nction temperature range symbol vceo vces vebo lc icm ib pd tj.tstg d40d1, 2 30 45 5 1 1.5 .5 1.67 6.25 -55 to +150 d40d4, 5 45 60 5 \5 .5 1.67 6.25 -55 to +150 d40d7, 8 60 75 5 1 1.5 .5 1.67 6.25 -55 to +150 units volts volts volts a a wat... |
Description |
NPN POWER TRANSISTORS
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File Size |
711.81K /
2 Page |
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ON Semi
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Part No. |
2N6438 ON0096
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OCR Text |
...r-Emitter Sustaining Voltage -- vceo(sus) = 100 Vdc (Min) -- 2N6437 vceo(sus) = 120 Vdc (Min) -- 2N6438 * High DC Current Gain -- hFE = 20-80 @IC = 10 Adc hFE = 12 (Min) @ IC = 25 Adc * Low Collector-Emitter Saturation Voltage -- VCE(sat) =... |
Description |
25 AMPERE POWER TRANSISTORS From old datasheet system
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File Size |
128.58K /
6 Page |
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it Online |
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Microsemi
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Part No. |
2N6303
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OCR Text |
...tor-Emitter Sustaining Voltage: vceo(sus) = - 80 Vdc (Min) DC Current Gain: h FE = 30-150 @ IC = 1.5 Adc Low Collector-Emitter Saturation Voltage: VCE(sat) = - 0.75 Vdc @ IC = 1.5 Adc High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ)... |
Description |
PNP Transistor
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File Size |
61.44K /
4 Page |
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it Online |
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ON Semi
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Part No. |
2N5877 ON0068
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OCR Text |
...20 40 60 80 0 0 Symbol TJ, Tstg vceo 25 VCB VEB PD IC IB Symbol JC 50 75 100 125 150 TC, CASE TEMPERATURE (C)
Figure 1. Power Derating
2N5877
60
60
- 65 to + 200
150 0.857
4.0
5.0
10 20
1.17
Max
2N5878
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Description |
10 AMPERE COMPLEMENTARY From old datasheet system
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File Size |
170.45K /
4 Page |
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it Online |
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New Jersey Semi-Conductor Products, Inc.
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Part No. |
BD750
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OCR Text |
...r-emitter sustaining voltage- : vceo(sus) = -90v(min)- bd750 = -120v(min)-bd750a ? high power dissipation ? complement to type bd751/751a applications ? designed for high voltage and high power amplifier applications. absolute maximum ratin... |
Description |
Silicon PNP Power Transistors
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File Size |
72.17K /
2 Page |
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it Online |
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Price and Availability
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