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vceo-600v Datasheet PDF File

For vceo-600v Found Datasheets File :: 273 Search Time::1.25ms
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				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	QM300HA-24
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=300A, IB1=-IB2=6A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. ...
Description	300 A, 3 CHANNEL, NPN, Si, POWER TRANSISTOR HIGH POWER SWITCHING USE INSULATED TYPE
File Size	76.58K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM300HA-2HB
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=300A, IB1=600mA, -IB2=6.0A -- -- Transistor part Diode part Conductive grease applied -- --...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	72.15K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM300HA-2 QM300HA-2H
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=300A, IB1=-IB2=6A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. ...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	71.33K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM300HA-H QM300HA-HB
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V,Emitter open VEB=7V, Collector open IC=300A, IB=400mA IC=-300A (diode forward ...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	70.40K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM30 QM30DY-H
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=30A, IB=0.4A -IC=30A (diode forward voltage) IC=30A, V...
Description	MEDIUM POWER SWITCHING USE INSULATED TYPE
File Size	68.68K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM30HA-HB
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V, Collector open IC=30A, IB=40mA IC=-30A (diode forward vo...
Description	MEDIUM POWER SWITCHING USE INSULATED TYPE 中功率开关使用绝缘型
File Size	67.52K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM30HA-H
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=30A, IB=0.4A -IC=30A (diode forward voltage) IC=30A, V...
Description	CAP CER 10000PF 100V X7R 1005 中功率开关使用绝缘型 MEDIUM POWER SWITCHING USE INSULATED TYPE
File Size	60.00K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM75TX-HB
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V, Collector open IC=75A, IB=100mA IC=-75A (diode forward v...
Description	MEDIUM POWER SWITCHING USE INSULATED TYPE
File Size	87.83K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM75TF-HB
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=75A, IB=100mA -IC=75A (diode forward voltage) IC=75A, ...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	85.92K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM50TF-HB
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=50A, IB=67mA -IC=50A (diode forward voltage) IC=50A, V...
Description	MEDIUM POWER SWITCHING USE INSULATED TYPE
File Size	85.44K / 5 Page	View it Online	Download Datasheet

For vceo-600v Found Datasheets File :: 273 Search Time::1.25ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |