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    CS5203-3 CS5203-3GDP3 CS5203-3GDPR3

ZF Electronics, Corp.
ZF Electronics Corporation
CHERRY[Cherry Semiconductor Corporation]
Part No. CS5203-3 CS5203-3GDP3 CS5203-3GDPR3
OCR Text ...5%) 0.20 0.4 1.4 V % % V A mA %/w dB C C Note 1: Load regulation and output voltage are measured at a constant junction temperature by lo...3: Dropout voltage is a measurement of the minimum input/output differential at full load. Note 4: G...
Description 3A, 3.3V Fixed Linear Regulator A.3V固定线性稳压器
3A, 3.3V Fixed Linear Regulator 3A3.3V固定线性稳压器

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    FS5ASJ-3

Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS5ASJ-3
OCR Text ...X. 2.3 2.3 2.3 q w e wr q GATE w DRAIN e SOURCE r DRAIN e 4V DRIVE VDSS ................................................................................ 150V rDS (ON) (MAX) ..............................................
Description HIGH-SPEED SwITCHING USE

File Size 36.78K  /  4 Page

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    Advanced Power Electronics
Part No. AP40N03GP-HF-3
OCR Text ...c =25 c p d at t a =2 5 c w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 2.5 c /w rthj-a max...3 0 gate-source voltage 20 v continuous drain current 40 ...
Description N-CHANNEL ENHANCEMENT MODE POwER MOSFET

File Size 76.85K  /  5 Page

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    FS5AS-3-T13

Renesas Electronics Corporation
Part No. FS5AS-3-T13
OCR Text ...to +150 0.32 Unit V V A A A A A w C C g Conditions VGS = 0 V VDS = 0 V L = 100 H Typical value Rev.1.00, Aug.20.2004, page 1 of 6 FS5AS-3 Electrical Characteristics (Tch = 25C) Parameter Drain-source breakdown voltage Gate-...
Description High-Speed Switching Use Nch Power MOS FET

File Size 196.54K  /  7 Page

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    Advanced Power Electronics
Part No. AP40N03GJ-HF-3
OCR Text ... c i d c i dm d at t c =25c w/c t stg t j symbol value unit parameter rating gate-source voltage + continuous drain current 3 continuous drain current 3 pulsed drain current 1 -55 to 150 c operating junction tempera...
Description N-CHANNEL ENHANCEMENT MODE POwER MOSFET

File Size 95.89K  /  6 Page

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    AC1313TF-3

Electronic Film Capacitors, Inc.
Electronic Film Capacit...
Part No. AC1313TF-3
OCR Text w + .050" Oval wrap and Fill Lead Specs Tinned Copperweld Under .250D = 24 AwG .250 - .440D = 22 AwG Above .440D = 20 AwG Metallized ...3.0 4.0 5.0 6.0 7.0 8.0 10.0 12.0 T .125 .125 .125 .125 .125 .140 .156 .171 .171 .140 .156 .140 ...
Description Metallized Polyester Capacitors

File Size 7.19K  /  1 Page

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    Advanced Power Electronics
Part No. AP4407GM-HF-3
OCR Text w e r electr on i cs c o r p . ?2012 advanced power electronics corp. usa www.a-powerusa.com p -channel enhancement-mode power mosfet ...3 continuous drain current 3 pulsed drain current 1 -55 to 150 c operating jun...
Description P-channel Enhancement-mode Power MOSFET

File Size 143.96K  /  5 Page

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    Advanced Power Electronics
Part No. AP4405GM-HF-3
OCR Text ....5 w linear derating factor 0.02 ...3 1/5 200806201-3 ap44 0 5 gm- hf- 3 t r : in rohs-compliant halogen-free s o-8 , shipped ...
Description P-CHANNEL ENHANCEMENT MODE POwER MOSFET

File Size 87.92K  /  5 Page

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    Advanced Power Electronics
Part No. AP80T10GR-HF-3
OCR Text ...resistance, junction-case 0.9 c/w rthj-a maximum thermal resistance, junction-ambient 62 c/w parameter storage temperature range total po...3 ?2010 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =2...
Description N-CHANNEL ENHANCEMENT MODE POwER MOSFET

File Size 78.09K  /  5 Page

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    Advanced Power Electronics
Part No. AP80T10GP-HF-3
OCR Text ... 0 . 9 c /w rthj-a maximum thermal resistance, junction-ambient 62 c /w parameter symbol units v ds v v gs v i...3 00 continuous drain current storage temperature range total power dissipation 166 ...
Description N-CHANNEL ENHANCEMENT MODE POwER MOSFET

File Size 77.63K  /  5 Page

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