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K30N60 MC9S1 FDP060AN C091P 48VDC KEL314 TMP82C5 N511413
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    STD90N4F3 STP90N4F3 STU90N4F3

STMicroelectronics
Part No. STD90N4F3 STP90N4F3 STU90N4F3
OCR Text ...orage temperature 1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD < 80 A, di/dt < 400A/s, VDS < V(BR)DSS, Tj < Tjmax 4. Starting Tj = 25C, ID = 40A, VDD = 30V Table 3. Symbol Rthj-case Rthj-a The...
Description N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 - IPAK STripFET Power MOSFET
N-channel 40V - 5.4mヘ - 80A - DPAK - TO-220 - IPAK STripFET⑩ Power MOSFET

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    STL150N3LLH5

STMicroelectronics
Part No. STL150N3LLH5
OCR Text ...cording Rthj-pcb 3. Pulse width limited by safe operating area Table 3. Symbol Rthj-case Rthj-pcb (1) Thermal resistance Parameter Thermal resistance junction-case (drain) (steady state) Thermal resistance junction-ambient Value 1....
Description N-channel 30 V - 0.0014 Ω - 35 A - PowerFLAT (6x5) STripFET V Power MOSFET
N-channel 30 V - 0.0014 ヘ - 35 A - PowerFLAT⑩ (6x5) STripFET⑩ V Power MOSFET

File Size 477.69K  /  12 Page

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    STW21NM50N STF21NM50N STB21NM50N-1 STP21NM50N STP21NM50N07 STB21NM50N

STMicroelectronics
Part No. STW21NM50N STF21NM50N STB21NM50N-1 STP21NM50N STP21NM50N07 STB21NM50N
OCR Text ...-220 D2PAK TO-220FP 1. Limited by wire bonding 3 12 100% avalanche tested Low input capacitance and gate charge Low gate input resistance I2PAK TO-247 Description The devices are realized with the second generati...
Description N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh Power MOSFET
N-channel 500V - 0.15ヘ - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh⑩ Power MOSFET

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    STL86N3LLH6AG

STMicroelectronics
Part No. STL86N3LLH6AG
OCR Text ....1 a i dm (2)(3) 3. pulse width limited by safe operating area. drain current (pulsed) 84 a p tot (1) total dissipation at t c = 25 c 60 w p tot (2) total dissipation at t pcb = 25 c 4 w t j t stg operating junction temperature storage ...
Description    High avalanche ruggedness

File Size 983.50K  /  16 Page

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    STW21NM60ND STI21NM60ND STP21NM60ND STB21NM60ND

STMicroelectronics
Part No. STW21NM60ND STI21NM60ND STP21NM60ND STB21NM60ND
OCR Text ...-220 D2PAK TO-220FP 1. Limited only by maximum temperature allowed 3 12 2 1 3 The worldwide best RDS(on)*area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low ...
Description N-channel 600 V, 0.17 Ω, 17 A FDmesh?/a> II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
N-channel 600 V, 0.17 ヘ, 17 A FDmesh⑩ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247

File Size 518.46K  /  18 Page

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    STF35N60DM2

STMicroelectronics
Part No. STF35N60DM2
OCR Text ... temperature notes: (1) limited by maximum junction temperature. (2) pulse width is limited by safe operating area. (3) i sd 28 a, di/dt=900 a/s; v ds peak < v (br)dss ,v dd = 400 v (4) v ds 480 v. table 3:...
Description    Extremely high dv/dt ruggedness

File Size 552.77K  /  13 Page

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    STP40NF20 STF40NF20 STB40NF20 STW40NF20

STMicroelectronics
Part No. STP40NF20 STF40NF20 STB40NF20 STW40NF20
OCR Text ...on temperature C 1. Value limited by wire bonding 2. Pulse width limited by safe operating area. 3. ISD 40A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX Table 2. Symbol Thermal data Parameter TO-220 D2PAK TO-247 TO-220FP 3.1 50 300 6...
Description N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET?/a> Power MOSFET
N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET
N-channel 200V - 0.038ヘ -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET⑩ Power MOSFET

File Size 461.38K  /  17 Page

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    STI30NM60ND STP30NM60ND STW30NM60ND STF30NM60ND STB30NM60ND

STMicroelectronics
Part No. STI30NM60ND STP30NM60ND STW30NM60ND STF30NM60ND STB30NM60ND
OCR Text ...-220 D2PAK TO-220FP 1. Limited only by maximum temperature allowed The world's best RDS(on)*in TO-220 amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resist...
Description N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh?/a> II Power MOSFET (with fast diode)
N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh II Power MOSFET (with fast diode)
N-channel 600V - 0.11楼? - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh垄芒 II Power MOSFET (with fast diode)
N-channel 600V - 0.11ヘ - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh⑩ II Power MOSFET (with fast diode)

File Size 267.68K  /  15 Page

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    STI17NF25 STD17NF25 STF17NF25 STP17NF25

STMicroelectronics
Part No. STI17NF25 STD17NF25 STF17NF25 STP17NF25
OCR Text ...ature Storage temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 17A, di/dt 200A/s, VDD < 80%V(BR)DSS Table 2. Symbol Rthj-case Rthj-amb Tl Thermal data Parameter Therm...
Description N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET?/a> II Power MOSFET
N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET
N-channel 250V - 0.14ヘ - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET⑩ II Power MOSFET

File Size 498.33K  /  17 Page

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    TMOV34S111MP TMOV34S131MP TMOV34S141MP TMOV34S151MP TMOV34S181MP TMOV34S201MP TMOV34S251MP TMOV34S271MP TMOV34S301MP TMO

Littelfuse
Part No. TMOV34S111MP TMOV34S131MP TMOV34S141MP TMOV34S151MP TMOV34S181MP TMOV34S201MP TMOV34S251MP TMOV34S271MP TMOV34S301MP TMOV34S321MP TMOV34S331MP TMOV34S351MP TMOV34S391MP TMOV34S571MP TMOV34S751MP TMOV34S421MP
OCR Text ...g due to abnormal over-voltage, limited current conditions as outlined in UL1449 Feb. 1998 edition.The device has a third lead, an indicator lead, which may be used to indicate that the MOV has been disconnected from the circuit. This lead ...
Description High Energy Industrial Thermally Protected

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