0.345v pdf Datasheet P6 Full Text Search --- IC-ON-LINE


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0.345v Datasheet PDF File

For 0.345v Found Datasheets File :: 181 Search Time::2.032ms
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				意法半导
Part No.	STD5NB30
OCR Text	0.75 w - 5a - dpak powermesh ? mosfet preliminary data n typical r ds(on) =0.75 w n extremely high dv/dt capability n 100% avalanche te...345v r ds(on) static drain-source on resistance v gs = 10v i d =2.5 a 0.75 0.9 w i d(on) on stat...
Description	N-Channel 300V-0.75Ω-5A- DPAK PowerMESHTM MOSFET(N沟道MOSFET)
File Size	57.21K / 5 Page	View it Online	Download Datasheet

				意法半导
Part No.	STD7NB20
OCR Text	0.3 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized n for trough-hole ...345v r ds(on) static drain-source on resistance v gs =10v i d =3.5 a 0.30 0.40 w i d(o n) on state d...
Description	N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET)
File Size	96.09K / 8 Page	View it Online	Download Datasheet

				意法半导
Part No.	STP5NB60 STP5NB60FP
OCR Text	... ds drain-source voltage (v gs =0) 600 v v dgr drain- gate voltage (r gs =20k w ) 600 v v gs gate-source voltage 30 v i d drain current (co...345v r ds(on) static drain-source on resistance v gs =10v i d = 2.5 a 1.8 2.0 w i d(o n) on state dr...
Description	N-Channel 600V-1.8Ω-5A- TO-220/TO-220FP PowerMESHTM MOSFET(N沟道MOSFET)
File Size	108.21K / 9 Page	View it Online	Download Datasheet

				意法半导
Part No.	STP7NB30
OCR Text	0.75 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description using...345v r ds(on) static drain-source on resistance v gs =10v i d = 3.5 a 0.75 0.9 w i d(o n) on state d...
Description	N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET)
File Size	56.07K / 6 Page	View it Online	Download Datasheet

				意法半导
Part No.	STP9NB60
OCR Text	0.65 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description using...345v r ds(on) static drain-source on resistance v gs =10v i d = 4.5 a 0.65 0.75 w i d(o n) on state ...
Description	N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET)
File Size	120.30K / 9 Page	View it Online	Download Datasheet

				意法半导
Part No.	STW5NB90
OCR Text	...s drain-source voltage (v gs = 0) 900 v v dgr drain- gate voltage (r gs = 20 k w ) 900 v v gs gate-source voltage 30 v i d drain current...345v r ds(on) static drain-source on resistance v gs = 10v i d =2.5 a 2.3 2.5 w i d(on) on state...
Description	N-Channel 900V-2.3Ω-5.6A- TO-247 PowerMESHTM MOSFET(N沟道MOSFET)
File Size	46.59K / 5 Page	View it Online	Download Datasheet

				意法半导 STMicroelectronics N.V.
Part No.	STB5NB60
OCR Text	...r ds(on) i d stb5nb60 600 v < 2.0 w 5a absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs =0) 600 v v dgr ...345v r ds(on) static drain-source on resistance v gs =10v i d = 2.5 a 1.8 2 w i d(o n) on state drai...
Description	N-Channel 600V-1.8Ω-5A- I2PAK PowerMESHTM MOSFET(N沟道MOSFET) N沟道600V.8Ω- 5A I2PAK PowerMESHTM MOSFET的（不适用沟道MOSFET的）
File Size	86.01K / 8 Page	View it Online	Download Datasheet

				意法半导
Part No.	STP4NB80
OCR Text	...s drain-source voltage (v gs = 0) 800 v v dgr drain- gate voltage (r gs = 20 k w ) 800 v v gs gate-source voltage 30 v i d drain current...345v r ds(on) static drain-source on resistance v gs = 10v i d = 2 a 3 3.3 w i d(on) on state dr...
Description	N-Channel 800V-3Ω-4A- TO-220/TO-220FP PowerMESHTM MOSFET(N沟道MOSFET)
File Size	83.09K / 6 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STP6NB80 STP6NB80FP
OCR Text	...ds drain-source voltage (v gs = 0) 800 v v dgr drain- gate voltage (r gs =20k w ) 800 v v gs gate-source voltage 30 v i d drain current (co...345v r ds(on) static drain-source on resistance v gs =10v i d =3a 1.6 1.9 w i d(o n) on state drain ...
Description	N - CHANNEL 800V - 1.6 Ohm - 5.7A - TO-220/TO-220FP
File Size	222.26K / 6 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STP11NB40
OCR Text	0.48 w - 10.7a - to-220/to-220fp powermesh ? mosfet n typical r ds(on) = 0.48 w n extremely high dv/dt capability n 100% avalanche tested n...345v r ds(on) static drain-source on resistance v gs =10v i d = 5.3 a 0.48 0.55 w i d(o n) on state ...
Description	N-CHANNEL PowerMESH MOSFET
File Size	134.74K / 9 Page	View it Online	Download Datasheet

For 0.345v Found Datasheets File :: 181 Search Time::2.032ms
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