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  0.36a Datasheet PDF File

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    SSD40P0411

SeCoS Halbleitertechnologie GmbH
Part No. SSD40P0411
OCR Text ... min. max. a 6. 35 6.8 0 j 2.30 ref. b 5.20 5.50 k 0.64 0.90 c 2.15 2.40 m 0.50 1.1 d 0.45 0.58 ...36a , -40v , r ds(on) 30m p-ch enhancement mode power mosfet elektronische bauelemente 2-de...
Description -36A , -40V , RDS(ON) 30m P-Ch Enhancement Mode Power MOSFET

File Size 1,555.70K  /  4 Page

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    SSD40P04-20D

SeCoS Halbleitertechnologie GmbH
Part No. SSD40P04-20D
OCR Text ...t ance junction-case r jc 3.0 c / w notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum ju...36a, -40v, r ds(on) 30m elektronische bauelemente 14-jul-2010 rev.b page 2 of 5 http://www...
Description P-Ch Enhancement Mode Power MOSFET

File Size 412.18K  /  5 Page

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    IRFPS37N50A IRFPS37N50

IRF[International Rectifier]
Part No. IRFPS37N50A IRFPS37N50
OCR Text ...l VDSS 500V RDS(on) max 0.13 ID 36A SUPER-247 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pul...
Description Power MOSFET(Vdss=500V, Rds(on)max=0.13ohm, Id=36A)
HEXFET? Power MOSFET

File Size 111.26K  /  8 Page

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    IRF5801 IRF5801TR

International Rectifier
Part No. IRF5801 IRF5801TR
OCR Text ...s r ds(on) max i d 200v 2.2 0.6a parameter max. units i d @ t a = 25c continuous drain current, v gs @ 10v 0.6 i d @ t a = 70c cont...36a, v gs = 0v t rr reverse recovery time ??? 45 ??? ns t j = 25c, i f = 0.36a q rr reverse re...
Description 200V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package

File Size 147.25K  /  8 Page

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    GSI Technology, Inc.
Part No. GS882Z18AD-150I GS882Z18AB-133
OCR Text ...eline 3-1-1-1 t kq tcycle 2.5 4.0 2.7 4.4 3.0 5.0 3.4 6.0 3.8 6.7 4.0 7.5 ns ns 3.3 v curr (x18) curr (x32/x36) 280 330 255 300 230 270 20...36a bga pin description symbol type description a 0 , a 1 i address field lsbs and address counter ...
Description 9Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 18 ZBT SRAM, 7.5 ns, PBGA165
9Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 18 ZBT SRAM, 8.5 ns, PBGA119

File Size 612.72K  /  35 Page

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    FQA36P1507 FQA36P15F109

Fairchild Semiconductor
Part No. FQA36P1507 FQA36P15F109
OCR Text ... * * * * -36A, -150V, RDS(on) = 0.09 @VGS = -10 V Low gate charge ( typical 81 nC) Low Crss ( typical 110pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating (R) Description Thes...
Description 150V P-Channel MOSFET

File Size 867.45K  /  9 Page

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    STC03DE170HP C03DE170HP

STMICROELECTRONICS[STMicroelectronics]
Part No. STC03DE170HP C03DE170HP
OCR Text 0.55 Preliminary Data General features Table 1. VCS(ON) 1V General features IC 1.8A RCS(ON) 0.55 Low equivalent on resist...36A VGS =10V IC =0.7A IB =70mA VCS =1V VCS =1V VGS =10V IC =1.8A V GS =10V IC =0.7A IB =0.36a IB =70...
Description Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.55OHM

File Size 288.13K  /  11 Page

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    AS7C25512NTD32_36A AS7C25512NTD32A AS7C25512NTD32A-133TQC AS7C25512NTD32A-133TQCN AS7C25512NTD32A-133TQI AS7C25512NTD32A

Alliance Semiconductor Corp...
ALSC
Alliance Semiconductor Corporation
Alliance Semiconductor, Corp.
Part No. AS7C25512NTD32_36A AS7C25512NTD32A AS7C25512NTD32A-133TQC AS7C25512NTD32A-133TQCN AS7C25512NTD32A-133TQI AS7C25512NTD32A-133TQIN AS7C25512NTD32A-166TQC AS7C25512NTD36A-133TQC AS7C25512NTD36A-133TQCN AS7C25512NTD36A-133TQI AS7C25512NTD36A-133TQIN AS7C25512NTD36A-166TQC AS7C25512NTD36A-166TQCN AS7C25512NTD32A-166TQCN AS7C25512NTD32A-166TQI AS7C25512NTD32A-166TQIN AS7C25512NTD36A-166TQIN
OCR Text ...on Logic block diagram A[18:0] 19 D Address register Burst logic Q 19 CLK CE0 CE1 CE2 R/W BWa BWb BWc BWd ADV / LD LBO ZZ ...36A (R) 16 Mb 2.5V Synchronous SRAM products list1,2 Org 1MX18 512KX32 512KX36 1MX18 512KX32 51...
Description NTD? Sync SRAM - 2.5V
2.5V 512K x 32/36 Pipelined SRAM with NTD 512K X 32 ZBT SRAM, 3.5 ns, PQFP100

File Size 408.38K  /  18 Page

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    AS7C25512NTF32_36A AS7C25512NTF36A-10TQC AS7C25512NTF36A-10TQCN AS7C25512NTF36A-10TQI AS7C25512NTF36A-10TQIN AS7C25512NT

Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
Part No. AS7C25512NTF32_36A AS7C25512NTF36A-10TQC AS7C25512NTF36A-10TQCN AS7C25512NTF36A-10TQI AS7C25512NTF36A-10TQIN AS7C25512NTF36A-75TQC AS7C25512NTF36A-75TQCN AS7C25512NTF32A AS7C25512NTF32A-10TQC AS7C25512NTF32A-10TQCN AS7C25512NTF32A-10TQI AS7C25512NTF32A-10TQIN AS7C25512NTF32A-75TQC AS7C25512NTF32A-75TQCN AS7C25512NTF32A-75TQI AS7C25512NTF32A-75TQIN AS7C25512NTF32A-85TQC AS7C25512NTF32A-85TQCN AS7C25512NTF32A-85TQI AS7C25512NTF32A-85TQIN AS7C25512NTF36A-75TQIN AS7C25512NTF36A-85TQCN AS7C25512NTF36A-85TQI
OCR Text ...0 ns Fast OE access time: 3.5/4.0 ns Fully synchronous operation Flow-through mode Asynchronous output enable control Available in 100-pin T...36A (R) 16 Mb 2.5V Synchronous SRAM products list1,2 Org 1MX18 512KX32 512KX36 1MX18 512KX32 51...
Description 2.5V 512K x 32/36 Flowthrough Synchronous SRAM with NTD 512K X 32 ZBT SRAM, 8.5 ns, PQFP100
2.5V 512K x 32/36 Flowthrough Synchronous SRAM with NTD 512K X 32 ZBT SRAM, 7.5 ns, PQFP100
2.5V 512K x 32/36 Flowthrough Synchronous SRAM with NTD 512K X 32 ZBT SRAM, 10 ns, PQFP100
DIODE ZENER SINGLE 1000mW 51Vz 5mA-Izt 0.05 5uA-Ir 38.8Vr DO41-GLASS 5K/AMMO
DIODE, ZENER, 24V, 5%, 1W&
DIODE ZENER SINGLE 1000mW 33Vz 7.5mA-Izt 0.05 5uA-Ir 25.1Vr DO41-GLASS 5K/REEL
NTD? Sync SRAM - 2.5V

File Size 404.72K  /  18 Page

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    APT36N90BC3G

Microsemi Corporation
Microsemi, Corp.
Part No. APT36N90BC3G
OCR Text ...nge TL dv/ dt Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 400V, ID = 36A, TJ = 125C) Avalanche Current 2 2 ( Id = 8.8A, Vdd = 50V ) ( Id = 8.8A, Vdd = 50V ) -55 to 150 260 50 8.8 2.9 1940 C V/ns A...
Description Super Junction MOSFET
Power MOSFET; Package: TO-247 [B]; ID (A): 36; RDS(on) (Ohms): 0.12; BVDSS (V): 900; 36 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

File Size 133.82K  /  5 Page

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