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  1-10s Datasheet PDF File

For 1-10s Found Datasheets File :: 28387    Search Time::1.328ms    
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    SSI2007 SSI2007-15

SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
Part No. SSI2007 SSI2007-15
OCR Text ... 17-dec-2013 rev. a page 1 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. ...10s steady state 10s steady state unit drain C source voltage v ds 20 -20 v gate C sou...
Description N & P-Ch Enhancement Mode Power MOSFET

File Size 1,119.08K  /  7 Page

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    AO4588

Alpha & Omega Semiconductors
Part No. AO4588
OCR Text ...uous drain current t a =25c w 3.1 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 16 75 24 maximum junction-to-ambient a ...10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion ...
Description 30V N-Channel MOSFET

File Size 276.93K  /  6 Page

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Part No. IRGB10B60KD
OCR Text ...efficient. benefits www.irf.com 1  benchmark efficiency for motor control.  rugged transient performance.  low emi.  excellent current s...10s, t j =150c v ce(on) typ. = 1.8v d 2 pak irgs10b60kd to-220ab irgb10b60kd to-262 irgsl10b60kd ...
Description 22 A, 600 V, N-CHANNEL IGBT, TO-220AB

File Size 328.45K  /  16 Page

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Part No. IRGB10B60KDPBF
OCR Text ... lead-free benefits www.irf.com 1  benchmark efficiency for motor control.  rugged transient performance.  low emi.  excellent current s...10s, t j =150c v ce(on) typ. = 1.8v d 2 pak irgs10b60kd to-220ab irgb10b60kd to-262 irgsl10b60kd ...
Description 22 A, 600 V, N-CHANNEL IGBT, TO-220AB

File Size 370.24K  /  16 Page

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    TY Semiconductor
Part No. DMG3407SSN
OCR Text ...ee finish; rohs compliant (note 1) ? halogen and antimony free. ?green? device (note 2) ? qualified to aec-q101 standards for high rel...10s t a = 25c t a = 70c i d -4.6 -3.6 a continuous drain current (note 5) v gs = -4.5v s...
Description P-CHANNEL ENHANCEMENT MODE MOSFET

File Size 133.05K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. DMG3407SSN DMG3407SSN-7
OCR Text ...ee finish; rohs compliant (note 1) ? halogen and antimony free. ?green? device (note 2) ? qualified to aec-q101 standards for high rel...10s t a = 25c t a = 70c i d -4.6 -3.6 a continuous drain current (note 5) v gs = -4.5v s...
Description P-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance

File Size 115.55K  /  2 Page

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    Infineon
Part No. G25H1203
OCR Text ...seriesthirdgeneration rev.2.1,2014-02-27 highspeedigbtintrenchandfieldstoptechnology recommendedincombinationwithsicdiode...10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermalresistance par...
Description High speed IGBT

File Size 2,324.10K  /  16 Page

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    M.S. Kennedy Corp.
Part No. DAC2812SE DAC2812SK DAC2812SH
OCR Text ...ifier reference and isolation 4 1 2 6 5 7 4707 dey road liverpool, n.y. 13088 m.s.kennedy corp. (315) 701-6751 dac2800s series iso...10s rise v in = 16 ? 40vdc, i o = 100% voltage change 200 200 mv recovery time (99%) 200 200 s ...
Description 12V, 6W DC-DC converter

File Size 160.84K  /  6 Page

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    AO7801

Alpha & Omega Semiconductors
Alpha & Omega Semicondu...
Part No. AO7801
OCR Text ....5v) r ds(on) < 950m w (v gs = -1.8v) general description the ao7801 uses advanced trench technology to provide excellent r ds(on) , low ga...10s r q ja c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-lead c steady-...
Description Dual P-Channel Enhancement Mode Field Effect Transistor

File Size 123.34K  /  4 Page

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    AO7403

Alpha & Omega Semiconductors
Part No. AO7403
OCR Text ...) r ds(on) < 900m ? (v gs = -1.8v) general description the ao7403 uses advanced trench technology to provide excellent r ds(on) , low ga...10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c...
Description P-Channel MOSFET

File Size 126.17K  /  4 Page

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