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  10.000001 Datasheet PDF File

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    MUR550PF MUR550APF MURD550APF MURD550PF

ON Semiconductor
Part No. MUR550PF MUR550APF MURD550APF MURD550PF
OCR Text ...ldering Purposes: 220C Max. for 10 Seconds 4 12 3 DPAK CASE 369C 1 4 3 YWW U 550 Pin 1: No Connect 4 TO-220AC CASE 221B PLASTIC...000001 0.00001 0.0001 0.001 0.01 t, TIME (s) 0.1 1.0 10 P(pk) t1 t2 10 DUTY CYCLE, D = t1/t2 1...
Description (MURD550xxx) SwitchMode Power Rectifier

File Size 108.70K  /  10 Page

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    NUV203E

NICHIA CORPORATION
Part No. NUV203E
OCR Text ...0825-1 and 21 cfr part 1040.10 safety standards . it is absolutely necessary to take overall safety measures against user's modules, equ ipment and systems into whichnichialdreceptaclemodulesareincorporated and/orintegrated. (2) o...
Description LD Receptacle Module

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    NGTB15N120IHLWG

ON Semiconductor
Part No. NGTB15N120IHLWG
OCR Text ...r voltage (v) 8 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 figure 3. output characteristics figure 4. typical transfer characteristics v ce , coll...000001 0.0001 0.001 0.01 0.1 thermal response (z jc ) 1 0.00001 50% duty cycle 20% 10% 5% 2% 1% si...
Description IGBT

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    MURF1560G

ON Semiconductor
Part No. MURF1560G
OCR Text ...ring purposes: 260 ? c max. for 10 seconds *for additional information on our pb ? free strategy and soldering details, please download the...000001 z jc (t) = r(t) r jc r jc = 1.6 ? c/w max d curves apply for power pulse train shown r...
Description ULTRAFAST RECTIFIERS 15 AMPERES, 100?00 VOLTS

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    NGTB40N60IHLWG

ON Semiconductor
Part No. NGTB40N60IHLWG
OCR Text ...cc = 400 v, i c = 40 a r g = 10 v ge = 0 v/ 15v t d(on) 70 ns rise time t r 40 turn ? off delay time t d(off) 140 fall time t f 70 tu...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001...
Description Insulated Gate Bipolar Transistor (IGBT)

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOT11N60
OCR Text ...00 bv dss / ? tj 0.67 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3.3 3.9 4.5 v r ds(on) 0.56 0.65 ...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 z q q q q jc normalized transient thermal resistance puls...
Description 600V,11A N-Channel MOSFET

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    NGTB20N120IHLWG

ON Semiconductor
Part No. NGTB20N120IHLWG
OCR Text ...cc = 600 v, i c = 20 a r g = 10 v ge = 0 v/ 15v t d(off) 235 ns fall time t f 180 turn ? off switching loss e off 0.7 mj turn ? off d...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 figure 18. igbt transient thermal impedance pulse...
Description IGBT

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    MMBT2132T3

ON Semiconductor
Part No. MMBT2132T3
OCR Text ...itter breakdown voltage (i c = 10 madc) v (br)ceo 30 e e vdc emitterbase breakdown voltage (i e = 100 adc) v (br)ebo 5.0 e e vdc collec...000001 i b , base current (a) 0.3 0.2 1.0 0.01 i c , collector current (a) 1000 100 i c , collector ...
Description General Purpose Transistors 700 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOT5N100
OCR Text ...00 bv dss / ? tj 1.04 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3.3 3.9 4.5 v r ds(on) 3.5 4.2 w ...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance ...
Description 1000V,4A N-Channel MOSFET

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    NGTB20N120LWG

ON Semiconductor
Part No. NGTB20N120LWG
OCR Text ...cc = 600 v, i c = 20 a r g = 10 v ge = 0 v/ 15 v t d(on) 86 ns rise time t r 26 turn ? off delay time t d(off) 235 fall time t f 180 ...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 50% duty cycle 20% 10% 5% 2% 1% single pulse r ...
Description IGBT

File Size 235.53K  /  9 Page

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