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				HYNIX[Hynix Semiconductor]
Part No.	HY5DU281622ET HY5DU28162 HY5DU281622ET-4 HY5DU281622ET-30 HY5DU281622ET-36 HY5DU281622ET-33 HY5DU281622ET-5 HY5DU281622ET-25 HY5DU281622ET-26 HY5DU281622ET-28
OCR Text	128m(8Mx16) GDDR SDRAM HY5DU281622ET This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are impl...
Description	128m(8Mx16) GDDR SDRAM
File Size	364.19K / 34 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TC58DVG02A1FT00 TC58DVG02A TC58DVG02A1FT
OCR Text	128m 8 BITS) CMOS NAND E PROM DESCRIPTION The TC58DVG02A1 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes 32 pages 8192 blocks. The device has a...
Description	Flash - NAND TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1-GBIT (128m*8 BITS) CMOS NAND E2PROM
File Size	442.34K / 44 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9K2G08U0M K9K2G08U0M-YCB0 K9K2G16U0M-PCB0 K9K2G16U0M-PIB0 K9K2G16U0M-YCB0 K9K2G16U0M-YIB0 K9K2G08U0M-FIB0 K9K2G08U0M-PCB0 K9K2G08U0M-PIB0 K9K2G08U0M-VIB0 K9K2G08U0M-YIB0 K9K2G08Q0M-PCB0 K9K2G08Q0M-PIB0 K9K2G08Q0M-YCB0 K9K2G08U0M-FCB0 K9K2G08U0M-VCB0 K9K2G08Q0M-YIB0 K9K2G16Q0M-PCB0 K9K2G16Q0M-PIB0 K9K2G16Q0M-YCB0 K9K2G16Q0M-YIB0
OCR Text	...ocument Title 256M x 8 Bit / 128m x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA Draft Date Sep....
Description	256M x 8 Bit / 128m x 16 Bit NAND Flash Memory
File Size	730.51K / 38 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9K1G08U0A K9K1G08U0A1 K9K1G16U0A K9K1G08Q0A K9K1G16Q0A
OCR Text	128m x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note is added. (VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.) 2. 63FBGA,1.8V p...
Description	128m x 8 Bit / 64M x 16 Bit NAND Flash Memory
File Size	902.07K / 43 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9K1G08U0B K9K1G08B0B K9K1G08R0B
OCR Text	128m x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 ( Program/Erase Characteristics) is added( page 13 ) 2. NAND Flash Technical Notes is changed. -Invalid block -> initial invalid block (...
Description	128m x 8 Bit NAND Flash Memory
File Size	945.71K / 41 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9K1G08U0M-YCB0 K9K1G08U0M-YIB0
OCR Text	128m x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 0.2 FLASH MEMORY History 1. Initial issue 1.[Page 31] device code (76h) --> device code (79h) 1.Powerup sequence is added : Recovery time of minimum 1s is required...
Description	128m x 8 Bit NAND Flash Memory
File Size	465.75K / 37 Page	View it Online	Download Datasheet

				SAMSUNG
Part No.	K9K4G08U0M
OCR Text	128m x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 34) 2. Add the data protection Vcc guidence for 1.8V device - below about...
Description	512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
File Size	573.66K / 35 Page	View it Online	Download Datasheet

				Fujitsu Media Devices Limited
Part No.	MB84VP2449 MB84VP24491HK MB84VP24491HK-70PBS
OCR Text	...) FLASH MEMORY & FCRAM CMOS 128m (x16) FLASH MEMORY & 32M (x16) Mobile FCRAMTM MB84VP24491HK-70 s FEATURES * Power Supply Voltage of 2.7 V to 3.1 V * High Performance 20 ns maximum page read access time, 70 ns maximum random access t...
Description	128m (X16) FLASH MEMORY 32M (X16) Mobile FCRAMTM
File Size	404.17K / 70 Page	View it Online	Download Datasheet

				Toshiba.
Part No.	TC58NVG0S3AFT00
OCR Text	128m DESCRIPTION 8BITS) CMOS NAND E PROM 2 The TC58NVG0S3A is a single 3.3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 1024 bloc...
Description
File Size	360.16K / 32 Page	View it Online	Download Datasheet

				Toshiba. Toshiba Semiconductor
Part No.	TC58NVG0S3AFT05
OCR Text	128m x 8 BITS) CMOS NAND EEPROM DESCRIPTION The TC58NVG0S3A is a single 3.3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND EEPROM) organized as (2048 + 64) bytes x 64 pages x 1024 blocks. T...
Description	1 GBIT (128m × 8 BITS) CMOS NAND EEPROM
File Size	549.33K / 33 Page	View it Online	Download Datasheet

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