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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MGFC41V7177
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OCR Text |
12w INTERNALLY MATCHED GaAs FET DESCRIPTION
The MGFC41V7177 is an internally impedence matched GaAs power FET especially designed for use in 7.1 - 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high ralia... |
Description |
7.1 - 7.7GHz BAND 12w INTERNALLY MATCHED GaAs FET
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File Size |
221.92K /
3 Page |
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http:// MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MGFC41V6472
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OCR Text |
12w INTERNALLY MATCHED GaAs FET DESCRIPTION
The MGFC41V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliab... |
Description |
6.4 ~ 7.2GHz BAND 12w INTERNALLY MATCHED GaAs FET
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File Size |
184.81K /
2 Page |
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it Online |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MGFC41V5964
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OCR Text |
12w INTERNALLY MATCHED GaAs FET DESCRIPTION
The MGFC41V5964 is an internally impedence matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high ralia... |
Description |
5.9 - 6.4GHz BAND 12w INTERNALLY MATCHED GaAs FET
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File Size |
55.82K /
2 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MGFC41V5964_04 MGFC41V5964 MGFC41V596404
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OCR Text |
12w INTERNALLY MATCHED GaAs FET DESCRIPTION
The MGFC41V5964 is an internally impedence matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high ralia... |
Description |
5.9 - 6.4GHz BAND 12w INTERNALLY MATCHED GaAs FET
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File Size |
208.96K /
3 Page |
View
it Online |
Download Datasheet
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Price and Availability
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