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    K4S281632B-N K4S281632B-NC_L1H K4S281632B-NC_L1L K4S281632B-NC/L1H K4S281632B-NC/L1L K4S281632B-NC1H K4S281632B-NC1L K4S

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S281632B-N K4S281632B-NC_L1H K4S281632B-NC_L1L K4S281632B-NC/L1H K4S281632B-NC/L1L K4S281632B-NC1H K4S281632B-NC1L K4S281632B-NL1H
OCR Text ...nized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle ...2m x 16 2m x 16 2m x 16 2m x 16 Refresh Counter Output Buffer Row Decoder Sense AMP Row ...
Description 128Mb SDRAM, 3.3V, LVTTL, 100MHz
2m x 16Bit x 4 Banks Synchronous DRAM in sTSOP 200万16 × 4银行同步DRAM在sTSOP

File Size 62.82K  /  8 Page

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    K4S281632B K4S281632B-TC10 K4S281632B-TC1H K4S281632B-TC1L K4S281632B-TC75 K4S281632B-TC80 K4S281632B-TL10 K4S281632B-TL

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S281632B K4S281632B-TC10 K4S281632B-TC1H K4S281632B-TC1L K4S281632B-TC75 K4S281632B-TC80 K4S281632B-TL10 K4S281632B-TL1H K4S281632B-TL1L K4S281632B-TL75 K4S281632B-TL80
OCR Text ...nized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle ...2m x 16 Sense AMP 2m x 16 2m x 16 2m x 16 Refresh Counter Output Buffer Row Decoder Row Buf...
Description 128Mbit SDRAM 2m x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL

File Size 107.58K  /  10 Page

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    K4S281632C-TC1H K4S281632C-TC1L K4S281632C-TC75 K4S281632C-TL1H K4S281632C-TL1L K4S281632C-TL75 K4S281632C-TP75 K4S28163

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S281632C-TC1H K4S281632C-TC1L K4S281632C-TC75 K4S281632C-TL1H K4S281632C-TL1L K4S281632C-TL75 K4S281632C-TP75 K4S281632C K4S281632C-TI K4S281632C-TI1H K4S281632C-TI1L K4S281632C-TI75 K4S281632C-TP K4S281632C-TP1H K4S281632C-TP1L K4S281632C-TL750
OCR Text ...nized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle ...2m x 16 Sense AMP 2m x 16 2m x 16 2m x 16 Refresh Counter Output Buffer Row Decoder Row Buf...
Description 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mbit SDRAM 2m x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL

File Size 111.68K  /  11 Page

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    K4S281632C K4S281632C-TI K4S281632C-TI1H K4S281632C-TI1L K4S281632C-TI75 K4S281632C-TP K4S281632C-TP1H K4S281632C-TP1L K

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
Part No. K4S281632C K4S281632C-TI K4S281632C-TI1H K4S281632C-TI1L K4S281632C-TI75 K4S281632C-TP K4S281632C-TP1H K4S281632C-TP1L K4S281632C-TP75
OCR Text ...nized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle ...2m x 16 2m x 16 2m x 16 2m x 16 Refresh Counter Output Buffer Row Decoder Sense AMP R...
Description 128Mbit SDRAM 2m x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
CONNECTOR ACCESSORY 连接器附

File Size 46.28K  /  9 Page

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    K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632D-L55 K4S281632D-L60 K4S281632D-L75 K4S281632D-L7C K4S281632D-NC1H K4S

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632D-L55 K4S281632D-L60 K4S281632D-L75 K4S281632D-L7C K4S281632D-NC1H K4S281632D-NC60 K4S281632D-NC75 K4S281632D-NC7C K4S281632D-NL1H K4S281632D-NL60 K4S281632D-NL75 K4S281632D-NL7C K4S281632D-TC K4S281632D-TC_L60 K4S281632D-TC75 K4S281632D-TL75 K4S281632D-TC_L1H K4S281632D-TC_L1L K4S281632D-TC_L55 K4S281632D-TC_L75 K4S281632D-TC_L7C K4S281632D-TC/L1H K4S281632D-TC/L1L K4S281632D-TC/L55 K4S281632D-TC/L60 K4S281632D-TC/L75 K4S281632D-TC/L7C K4S281632D-TL60 K4S281632D-TC7C K4S281632D-TL55 K4S281632D-TL7C
OCR Text ...nized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle ...2m x 16 2m x 16 2m x 16 2m x 16 Refresh Counter Output Buffer Row Decoder Sense AMP Row ...
Description 128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2m x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz

File Size 110.59K  /  11 Page

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    K4S281633D-N1H K4S281633D-N1L K4S281633D-N75 K4S281633D-RL

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S281633D-N1H K4S281633D-N1L K4S281633D-N75 K4S281633D-RL
OCR Text ...nized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle ...2m x 16 Sense AMP 2m x 16 2m x 16 2m x 16 Refresh Counter Output Buffer Row Decoder Row ...
Description IC REG ULDO DUAL 2.8/1.5V 6-MLF
8Mx16 SDRAM 54CSP
2m x 16Bit x 4 Banks SDRAM in 54CSP Data Sheet

File Size 66.22K  /  10 Page

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    UPD23C32080ALGX-XXX UPD23C32080ALGY-MKH UPD23C32080ALGY-XXX-MJH UPD23C32080AL UPD23C32080ALGX UPD23C32080ALGY-MJH UPD23C

NEC[NEC]
Part No. UPD23C32080ALGX-XXX UPD23C32080ALGY-MKH UPD23C32080ALGY-XXX-MJH UPD23C32080AL UPD23C32080ALGX UPD23C32080ALGY-MJH UPD23C32080ALGY-XXX-MKH UPD23C32040ALGY-XXX-MKH UPD23C32040AL UPD23C32040ALGX UPD23C32040ALGX-XXX UPD23C32040ALGY-MJH UPD23C32040ALGY-MKH UPD23C32040ALGY-XXX-MJH
OCR Text ... 8-BIT (BYTE MODE) / 2m-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The PD23C32040AL and PD23C32080AL are 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE mode : 4,194,304 words by 8 bits, WORD ...
Description 32m-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2m-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE

File Size 307.18K  /  24 Page

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    SI-3000B SI-3157B SI-3025B SI-3.00B

SANKEN[Sanken electric]
Sanken Electric Co.,Ltd.
Part No. SI-3000B SI-3157B SI-3025B SI-3.00B
OCR Text ... SI-3157B typ. max. 27*1 15.70 16.48 min. 6*2,6 2.448 SI-3025B typ. max. 27*1 2.550 VIN=VO+3V, IO=0.2A 0.5 IO0.27A 10 VIN=(VO+1) to 27V,...2m m 0x x7 2m (2 m 5 2m (5. .3 C 2 /W m C/ ) (7. ...
Description 5-TERMINAL, MULTI-FUNCTION, FULL-MOLD, LOW DROPOUT VOLTAGE DROPPER TYPE
5-Terminal/ Multi-Function/ Full-Mold/ Low Dropout Voltage Dropper Type

File Size 45.35K  /  5 Page

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    Integrated Device Technology, Inc.
Part No. ICS8430DYI-11LFT ICS8430DYI-11T
OCR Text ... 25 9 10 11 12 13 14 15 16 1 2 3 4 5 6 7 8 24 23 22 21 20 19 18 17 xtal1 test_clk xtal_sel v cca s_load s_data s_clock mr m5 m6 m7 m...2m times the reference frequency by adjusting the vco control voltage. note that for some values of ...
Description 700 MHz, OTHER CLOCK GENERATOR, PQFP32 7 X 7 MM, 1.40 MM HEIGHT, MS-026, LQFP-32

File Size 169.70K  /  16 Page

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    K4S640832K K4S641632K K4S641632K-T K4S640832K-T_UC_L75 K4S641632K-T_UC_L50 K4S641632K-T_UC_L60 K4S641632K-TUC_L50 K4S641

SAMSUNG[Samsung semiconductor]
Part No. K4S640832K K4S641632K K4S641632K-T K4S640832K-T_UC_L75 K4S641632K-T_UC_L50 K4S641632K-T_UC_L60 K4S641632K-TUC_L50 K4S641632K-TUC_L60 K4S641632K-TUC_L75 K4S640832K-TUC_L75 K4S641632K-TUC/L50 K4S641632K-TUC/L60 K4S640832K-TUC/L75 K4S641632K-TUC/L75
OCR Text ... bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle ...2m x 8 / 1M x 16 Sense AMP 2m x 8 / 1M x 16 2m x 8 / 1M x 16 2m x 8 / 1M x 16 Refresh Counter Out...
Description 64Mb K-die SDRAM

File Size 211.60K  /  14 Page

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