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  180.175 Datasheet PDF File

For 180.175 Found Datasheets File :: 22156    Search Time::1.36ms    
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    IPD12N03LBG IPF12N03LBG IPS12N03LBG IPU12N03LBG

Infineon Technologies AG
Part No. IPD12N03LBG IPF12N03LBG IPS12N03LBG IPU12N03LBG
OCR Text ...typ 1 0.5 0 60 100 140 180 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz ...175 C, 98% Ciss 1000 Coss 175 C 25 C C [pF] I F [A] 100 Crss 10 10 0 5 10 15 20...
Description OptiMOS?2 Power-Transistor
OptiMOS㈢2 Power-Transistor

File Size 414.16K  /  12 Page

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    IPD144N06NG

Infineon Technologies AG
Part No. IPD144N06NG
OCR Text ...T j=25 C parameter: V GS 50 180 160 140 120 10 V 5V 40 7V 5.5 V 100 80 60 40 20 0 0 1 2 6.5 V R DS(on) [m] 30 ...175 C 25 C I D [A] 40 30 20 20 10 0 0 2 4 6 8 0 0 20 40 60 80 V GS [V] ...
Description OptiMOS㈢ Power-Transistor

File Size 377.16K  /  9 Page

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    IPD350N06LG

Infineon Technologies AG
Part No. IPD350N06LG
OCR Text ... 0.5 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 ...175 C 98% 103 25 C Ciss C [pF] I F [A] 101 175 C 25 C 98% Coss 102 Crss ...
Description OptiMOS??Power-Transistor
OptiMOS㈢ Power-Transistor
OptiMOS? Power-Transistor

File Size 386.77K  /  9 Page

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    MTN9240J3

Cystech Electonics Corp.
Part No. MTN9240J3
OCR Text ...1 1.2 1.4 -60 -20 20 60 100 140 180 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v v ...175 200 t c , case temperature(c) i d , maximum drain current(a) cystech electronics co...
Description N-Channel Enhancement Mode Power MOSFET

File Size 258.32K  /  9 Page

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    IPD400N06NG

Infineon Technologies AG
Part No. IPD400N06NG
OCR Text ... 1 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 ...175 C 25 C 175C 98% C [pF] I F [A] 101 25C 98% Coss 102 Crss 100 101 0 10 2...
Description OptiMOS? Power-Transistor
OptiMOS㈢ Power-Transistor

File Size 348.91K  /  9 Page

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    IRF3710L IRF3710S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710L IRF3710S
OCR Text ..., for 10 seconds Max. 57 40 180 3.8 200 1.3 20 530 28 20 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-s...
Description Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.025ohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A)
Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)

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    IPD640N06LG

Infineon Technologies AG
Part No. IPD640N06LG
OCR Text ...5 20 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 ...175 C 98% 25 C Ciss 175 C 10 1 C [pF] 100 Coss I F [A] 100 10-1 Crss 10 0...
Description OptiMOS? Power-Transistor
OptiMOS㈢ Power-Transistor

File Size 349.24K  /  9 Page

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    IPD64CN10NG IPP64CN10N IPU64CN10NG

Infineon Technologies A...
Infineon Technologies AG
Part No. IPD64CN10NG IPP64CN10N IPU64CN10NG
OCR Text ... 0.5 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 ...175 C, 98% 103 Ciss Coss 175 C 10 25 C, 98% C [pF] 102 I F [A] Crss 1 101...
Description OptiMOS㈢2 Power-Transistor
OptiMOS?2 Power-Transistor

File Size 384.47K  /  10 Page

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    IPDH5N03LA IPDH5N03LAG IPSH5N03LA IPSH5N03LAG

Infineon Technologies AG
Part No. IPDH5N03LA IPDH5N03LAG IPSH5N03LA IPSH5N03LAG
OCR Text ...typ 1 0.5 0 60 100 140 180 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. Capacitances C =f(V DS); V GS=0 V; f =1 MHz ...175 C 175 C, 98% C [pF] 102 Crss 100 I F [A] 10 25 C, 98% 10 1 5 10 15 2...
Description OptiMOS?2 Power-Transistor
OptiMOS㈢2 Power-Transistor

File Size 321.90K  /  10 Page

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