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1mil Datasheet PDF File

For 1mil Found Datasheets File :: 88 Search Time::0.672ms
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					Intersil Corporation
Part No.	HS-26C31RH-T
OCR Text	...x 533m 25.4m (97 x 195 x 21mils 1mil) METALLIZATION: M1: Mo/Tiw Thickness: 5800A M2: Al/Si/Cu Thickness: 10kA 1kA SUBSTRATE POTENTIAL: Internally connected to VDD. May be left floating. BACKSIDE FINISH: Silicon PASSIVATION: Type: SiO2 Thick...
Description	Radiation Hardened Quad Differential Line Receiver(抗辐射四路差分线接收
File Size	33.14K / 3 Page	View it Online	Download Datasheet

					Intersil, Corp. Intersil Corporation
Part No.	5962R9563101TEC HS9-26CT32RH 5962R9563101TXC HS1-26CT32RH
OCR Text	...x 533m 25.4m (85 x 130 x 21mils 1mil) METALLIZATION: M1: Mo/Tiw Thickness: 5800A M2: Al/Si/Cu Thickness: 10kA 1kA SUBSTRATE POTENTIAL: Internally connected to VDD. May be left floating. BACKSIDE FINISH: Silicon PASSIVATION: Type: SiO2 Thick...
Description	Radiation Hardened Quad Differential Line Receiver QUAD LINE RECEIVER, CDIP16
File Size	43.62K / 3 Page	View it Online	Download Datasheet

					Intersil, Corp. Intersil Corporation
Part No.	5962R9563201TXC HS-26CT31RH-T HS9-26C31RH-T 5962R9563201TEC HS1-26CT31RH-T
OCR Text	...x 533m 25.4m (97 x 195 x 21mils 1mil) METALLIZATION: M1: Mo/Tiw Thickness: 5800A M2: Al/Si/Cu Thickness: 10kA 1kA SUBSTRATE POTENTIAL: Internally connected to VDD. May be left floating. BACKSIDE FINISH: Silicon PASSIVATION: Type: SiO2 Thick...
Description	Radiation Hardened Quad Differential Line Driver(抗辐射四路差分线驱动辐射加固四路差分线路驱动器（抗辐射四路差分线驱动器）
File Size	33.17K / 3 Page	View it Online	Download Datasheet

					Intersil
Part No.	HS-26CT32RH-T
OCR Text	...x 533m 25.4m (85 x 130 x 21mils 1mil) METALLIZATION: M1: Mo/Tiw Thickness: 5800A M2: Al/Si/Cu Thickness: 10kA 1kA SUBSTRATE POTENTIAL: Internally connected to VDD . May be left floating. BACKSIDE FINISH: Silicon PASSIVATION: Type: SiO2 Thic...
Description	Differential Line Receiver, Quad, TTL Enable, 5V, Rad-Hard
File Size	61.29K / 3 Page	View it Online	Download Datasheet

					Intersil Corporation
Part No.	HS-6664RH-T
OCR Text	... 483m 25.4m) 271 x 307 x 19mils 1mil METALLIZATION: PASSIVATION: Type: Silox (SiO2) Thickness: 8kA 1kA WORST CASE CURRENT DENSITY: < 2.0e5 A/cm2 TRANSISTOR COUNT: 110, 874, (27,719 Gates) PROCESS: AVLSI Si/AI/Cu 2kA 500A TiW M2: 10kA 2k...
Description	Radiation Hardened 8K x 8 CMOS PROM(抗辐射CMOS 64K 可编程ROM)
File Size	178.11K / 3 Page	View it Online	Download Datasheet

					Intersil
Part No.	HS-1840ARH HS-1840ARH-T
OCR Text	... 483m 25.4m) 111 x 161 x 19mils 1mil METALLIZATION: Type: Al Si Cu Thickness: 16.0kA 2kA SUBSTRATE POTENTIAL: Unbiased (DI) BACKSIDE FINISH: Silicon PASSIVATION: Type: Nitride (Si3N4) over Silox (SiO2) Nitride Thickness: 4.0kA 0.5kA Silox T...
Description	Analog Multiplexer, 16 Channel CMOS, Power-Off Hi-Z, Rad-Hard
File Size	63.78K / 3 Page	View it Online	Download Datasheet

					Intersil, Corp. Intersil Corporation
Part No.	HS-5104ARH-T HS9-5104ARH-T HS1-5104ARH-T
OCR Text	... x 483m 25.4m) 95 x 99 x 19mils 1mil METALLIZATION: Type: Al Si Cu Thickness: 16.0kA 2kA SUBSTRATE POTENTIAL: Unbiased (DI) BACKSIDE FINISH: Silicon PASSIVATION: Type: Nitride (Si3N4) over Silox (SiO2) Nitride Thickness: 3.5kA 1.5kA Silox T...
Description	RESISTOR; SMT; FILM;15.0 OHM;250.0 MW QUAD OP-AMP, 3000 uV OFFSET-MAX, 8 MHz BAND WIDTH, CDFP14 Radiation Hardened Low Noise Quad Operational Amplifier
File Size	24.49K / 2 Page	View it Online	Download Datasheet

					Intersil Corporation
Part No.	HS1-508ARH-T HS9-508ARH-T
OCR Text	...m 25.4 m m) 83 x 108 x 11mils 1mil metallization: type: al si thickness: 12.5k ? 2k ? substrate potential: unbiased (di) backside finish: silicon passivation: type: silox (s i o 2 ) thickness: 8.0k ? 1.0k ? worst case current density: 6...
Description	Radiation Hardened 8 Channel CMOS Analog Multiplexer with Overvoltage Protection
File Size	72.62K / 3 Page	View it Online	Download Datasheet

					Intersil Corporation
Part No.	HS9-26C31RH HS1-26C31RH HS1-26CT31RH-T
OCR Text	...m 25.4 m m (97 x 195 x 21mils 1mil) metallization: m1: mo/tiw thickness: 5800 ? m2: al/si/cu thickness: 10k ? 1k ? substrate potential: internally connected to v dd. may be left ?oating. backside finish: silicon passivation: type: sio 2 ...
Description	Radiation Hardened Quad Differential Line Driver
File Size	33.17K / 3 Page	View it Online	Download Datasheet

					Intersil Corporation
Part No.	HS1-6617RH-T HS9-6617RH-T 5962R9570801TJC
OCR Text	... 25.4 m m) 164 x 250 x 19mils 1mil metallization: type: silicon - aluminum thickness: 13.0k ? 2k ? substrate potential: v dd backside finish: silicon passivation: type: silox (s i o 2 ) thickness: 8.0k ? 1k ? worst case current density:...
Description	Radiation Hardened 2K x 8 CMOS PROM
File Size	94.39K / 3 Page	View it Online	Download Datasheet

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