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  2-5q1a Datasheet PDF File

For 2-5q1a Found Datasheets File :: 59    Search Time::1.64ms    
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    TOSHIBA
Part No. TPCA8039-H
OCR Text ...nhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 0.5 ma) absolute maximum ratings (ta = 25c) characteristic symbol rating...5q1a weight: 0.069 g (typ.) circuit configuration 8 6 1 2 3 7 5 4 1,2,3:source 4:gate 5,...
Description Power MOSFET (N-ch single VDSS≤30V)

File Size 194.17K  /  7 Page

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    TPCA8046-H

Toshiba Semiconductor
Part No. TPCA8046-H
OCR Text ...hancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 0.5 ma) absolute maximum ratings (ta = 25c) characteristic symbol ratin...5q1a weight: 0.069 g (typ.) circuit configuration 8 6 1 2 3 7 5 4 1,2,3:source 4:gate 5,...
Description TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H)

File Size 188.05K  /  7 Page

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    TOSHIBA
Part No. TPCA8046-H
OCR Text ...hancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 0.5 ma) absolute maximum ratings (ta = 25c) characteristic symbol ratin...5q1a weight: 0.069 g (typ.) circuit configuration 8 6 1 2 3 7 5 4 1,2,3:source 4:gate 5,...
Description Power MOSFET (N-ch single 30V<VDSS≤60V)

File Size 188.86K  /  7 Page

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    TOSHIBA
Part No. TPCA8047-H
OCR Text ...hancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 0.5 ma) absolute maximum ratings (ta = 25c) characteristic symbol ratin...5q1a weight: 0.069 g (typ.) circuit configuration 8 6 1 2 3 7 5 4 1,2,3:source 4:gate 5,...
Description Power MOSFET (N-ch single 30V<VDSS≤60V)

File Size 190.84K  /  7 Page

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    TPCA8047-H

Toshiba Semiconductor
Part No. TPCA8047-H
OCR Text ...hancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 0.5 ma) absolute maximum ratings (ta = 25c) characteristic symbol ratin...5q1a weight: 0.069 g (typ.) circuit configuration 8 6 1 2 3 7 5 4 1,2,3:source 4:gate 5,...
Description Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications

File Size 190.03K  /  7 Page

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    TOSHIBA
Part No. TPCA8A02-H
OCR Text ...nhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristic symbol rating u...5q1a weight: 0.069 g (typ.) circuit configuration 8 6 1 2 3 7 5 4 1,2,3:source 4:gate 5,6...
Description Power MOSFET (N-ch single VDSS≤30V)

File Size 223.73K  /  8 Page

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    TPCA8A02-H

Toshiba Semiconductor
Part No. TPCA8A02-H
OCR Text ...nhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristic symbol rating u...5q1a weight: 0.069 g (typ.) circuit configuration 8 6 1 2 3 7 5 4 1,2,3:source 4:gate 5,6...
Description High Efficiency DC-DC Converter Applications Notebook PC Applications

File Size 211.67K  /  8 Page

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    TOSHIBA
Part No. TPCA8A04-H
OCR Text ...rce on-resistance: r ds (on) = 2.3 m (typ.) ? high forward transfer admittance: |y fs | = 127 s (typ.) ? low leakage current: i dss...5q1a weight: 0.069 g (typ.) circuit configuration 8 6 1 2 3 7 5 4 tpca8a04-h 2010-01...
Description Power MOSFET (N-ch single VDSS≤30V)

File Size 216.05K  /  8 Page

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    TPCA8A04-H

Toshiba Semiconductor
Part No. TPCA8A04-H
OCR Text ...rce on-resistance: r ds (on) = 2.3 m (typ.) ? high forward transfer admittance: |y fs | = 127 s (typ.) ? low leakage current: i dss...5q1a weight: 0.069 g (typ.) circuit configuration 8 6 1 2 3 7 5 4 tpca8a04-h 2010-01...
Description TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode

File Size 204.00K  /  8 Page

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For 2-5q1a Found Datasheets File :: 59    Search Time::1.64ms    
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