|
|
 |
Hitachi,Ltd.
|
Part No. |
HM62W1400H
|
OCR Text |
2.0 nov. 11, 1998 description the hm62w1400h is a 4-mbit high speed static ram organized 4-mword 1-bit. it has realized high speed access time by employing cmos process (4-transistor + 2-poly resistor memory cell)and high speed circuit ... |
Description |
4M High Speed SRAM (4-Mword ×1-bit)(4M高速静态RAM(4M×1)
|
File Size |
235.31K /
15 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Hitachi,Ltd.
|
Part No. |
HM621400H
|
OCR Text |
...ng cmos process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. it is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in syste... |
Description |
4M High Speed SRAM (4-Mword ×1-bit)(4M高速静态RAM(4M字)
|
File Size |
112.39K /
15 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Renesas Electronics Corporation. Renesas Electronics, Corp.
|
Part No. |
R1RW0404DGE-2PR R1RW0404DGE-2LR REJ03C0115-0100Z
|
OCR Text |
...n) ? data retention voltage: 2 v (min) (l-version) ? center v cc and v ss type pin out
r1rw0404d series rev.1.00, mar.12.2004, page 2 of 11 ordering information type no. access time package r1rw0404dge-2pr 12 ns 400... |
Description |
4M HIGH SPEED SRAM (1-MWORD X 4-BIT) 4分高速SRAM - MWORD × 4位)
|
File Size |
79.53K /
13 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Renesas Electronics Corporation. Renesas Electronics, Corp.
|
Part No. |
R1RP0404DGE-2PR R1RP0404DGE-2LR
|
OCR Text |
...n) ? data retention voltage: 2.0 v (min) (l-version) ? center v cc and v ss type pin out
r1rp0404d series rev.1.00, mar.12.2004, page 2 of 11 ordering information type no. access time package r1rp0404dge-2pr 12 ns 4... |
Description |
4M High Speed SRAM (1-Mword 4-bit) 4分高速SRAM - Mword4位)
|
File Size |
80.12K /
13 Page |
View
it Online |
Download Datasheet
|
|
|
 |
HITACHI[Hitachi Semiconductor]
|
Part No. |
HM62W1400H
|
OCR Text |
2.0 Nov. 11, 1998 Description
The HM62W1400H is a 4-Mbit high speed static RAM organized 4-Mword x 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit d... |
Description |
4M High Speed SRAM (4-Mword x1-bit)
|
File Size |
74.12K /
14 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|