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  20a 600v Datasheet PDF File

For 20a 600v Found Datasheets File :: 1404    Search Time::2.36ms    
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    Icemos Technology
Part No. ICE20N170
OCR Text ...t summary i d t a =25 o c 20a max v ( br)dss i d =250ua 600v min r ds(on) v gs =10v 0.17 typ q g v ds =480v 62nc typ icemos and its sister company 3 d semi own the fundamental patents ...
Description N-Channel Enhancement Mode MOSFET

File Size 550.94K  /  9 Page

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    Icemos Technology
Part No. ICE20N170U
OCR Text ...t summary i d t a =25 o c 20a max v ( br)dss i d =250ua 600v min r ds(on) v gs =10v 0.17 typ q g v ds =480v 62nc typ icemos and its sister company 3 d semi own the fundamental patents ...
Description N-Channel Enhancement Mode MOSFET

File Size 502.31K  /  9 Page

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    Icemos Technology
Part No. ICE20N170FP
OCR Text ...t summary i d t a =25 o c 20a max v ( br)dss i d =250ua 600v min r ds(on) v gs =10v 0.17 typ q g v ds =480v 62nc typ icemos and its sister company 3 d semi own the fundamental patents ...
Description N-Channel Enhancement Mode MOSFET

File Size 517.40K  /  9 Page

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    FGH80N60FDTU FGH80N60FD

Fairchild Semiconductor
Part No. FGH80N60FDTU FGH80N60FD
OCR Text ...ter Diode Forward Voltage IF = 20a Test Conditions TC = 25C TC = 125C TC = 25C IES =20a, dIES/dt = 200A/s TC = 125C TC = 25C TC = 125C ...600v, 80A Field Stop IGBT Typical Performance Characteristics Figure 1. Typical Output Character...
Description 600v, 80A Field Stop IGBT

File Size 662.48K  /  9 Page

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    SGW10N60 SGW10N60A SGB10N60A SGP10N60A

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. SGW10N60 SGW10N60A SGB10N60A SGP10N60A
OCR Text ...RENT Ic t p =5 s 40A 30A 20a 10A T C =110c Ic 10A 15 s 50 s 1A 2 00 s 1ms DC 0,1A 0A 10Hz 100Hz 1kHz 10kH...600v, start at Tj = 25C) VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector cur...
Description Fast IGBT in NPT-technology
IGBTs & DuoPacks - 10A 600v TO220aB IGBT
IGBTs & DuoPacks - 10A 600v TO263AB SMD IGBT
IGBTs & DuoPacks - 10A 600v TO247AC IGBT

File Size 397.18K  /  12 Page

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    Icemos Technology
Part No. ICE20N170B
OCR Text ...t summary i d t a =25 o c 20a max v ( br)dss i d =250ua 600v min r ds(on) v gs =10v 0.17 typ q g v ds =480v 62nc typ icemos and its sister company 3 d semi own the fundamental patents ...
Description N-Channel Enhancement Mode MOSFET

File Size 480.43K  /  9 Page

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    YA975C6R

Fuji Electric
Part No. YA975C6R
OCR Text 20a / 600v) [200510] Super LLD II (For PFC circut) Outline drawings, mm TO-220aB (current discontinuous mode) LOW LOSS SUPER HIGH SPEED RECTIFIER Features Super high speed switching High reliability by planer design Co...
Description Super LLD II (For PFC circut) LOW LOSS SUPER HIGH SPEED RECTIFIER

File Size 74.63K  /  3 Page

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    TS965C6R

Fuji Electric
Part No. TS965C6R
OCR Text 20a / 600v) (For PFC circut) (current continuous mode) LOW LOSS SUPER HIGH SPEED RECTIFIER Super LLD Outline drawings, mm T-pack(S) Features Super high speed switching High reliability by planer design Applications PFC circ...
Description LOW LOSS SUPER HIGH SPEED RECTIFIER

File Size 101.05K  /  3 Page

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    IRGPC40UD2

IRF[International Rectifier]
Part No. IRGPC40UD2
OCR Text ...t) 3.0V G @VGE = 15V, IC = 20a E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's wel...600v -- -- 3500 VGE = 0V, V CE = 600v, T J = 150C -- 1.3 1.7 V IC = 15A See Fig. 13 -- 1.2 1.6 IC = ...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600v, @Vge=15V, Ic=20a)

File Size 377.91K  /  8 Page

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    IRGPC40U

IRF[International Rectifier]
Part No. IRGPC40U
OCR Text ...E(sat) 3.0V @VGE = 15V, I C = 20a n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have ...600v -- -- 2500 VGE = 0V, V CE = 600v, T J = 150C -- -- 100 nA VGE = 20V Switching Characteristic...
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=600v, @Vge=15V, Ic=20a)

File Size 211.38K  /  6 Page

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